MMBF170W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Features * * * * * * * Mechanical Data * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Also Available in Lead Free Version Case: SOT-323 Case Material - Molded Plastic. UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) * * * * * * * Drain SOT-323 D Gate S G Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed ID Units V V Value 200 1.6 625 -55 to +150 Units mW mW/C K/W C V mA @TA = 25C unless otherwise specified Characteristic Symbol Total Power Dissipation (Note 1) Pd Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: VGSS Value 60 60 20 40 500 800 RJA Tj, TSTG @TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 60 70 1.0 10 V A nA VGS = 0V, ID = 100A VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VGS(th) RDS (ON) gFS 0.8 80 2.1 3.0 5.0 V mS VDS = VGS, ID = -250A VGS = 10V, ID = 200mA VDS =10V, ID = 0.2A Ciss Coss Crss 22 11 2.0 40 30 5.0 pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) 10 10 ns ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50 1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. MMBF170W Document number: DS30493 Rev. 2 - 0 1 of 3 www.diodes.com November 2007 (c) Diodes Incorporated MMBF170W 0.8 0.6 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V Tj = 25C 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ADVANCE INFORMATION ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 2.1V 0 0 3 2 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 0 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, I D = 0.05A 1.0 0.5 1.0 5 4 ID = 500mA ID = 50mA 3 2 1 0 70 95 -30 -5 20 45 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature Ordering Information 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage (Notes 3 and 4) Part Number MMBF170W-7 Notes: 0.2 6 2.0 0 -55 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0 Case SOT-323 Packaging 3000/Tape & Reel 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For lead free version (with lead free terminal finish) part number, please add "-F" suffix to part number above. Example: MMBF170W-7-F. Marking Information YM K6Z Date Code Key Year K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2006 2007 2008 2009 2010 2011 2012 T U V W X Y Z Code Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D MMBF170W Document number: DS30493 Rev. 2 - 0 2 of 3 www.diodes.com November 2007 (c) Diodes Incorporated MMBF170W Package Outline Dimensions ADVANCE INFORMATION A B C TOP VIEW G H K M J D F L SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0 8 All Dimensions in mm Suggested Pad Layout Y Z G C X E Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBF170W Document number: DS30493 Rev. 2 - 0 3 of 3 www.diodes.com November 2007 (c) Diodes Incorporated