MUR1100ERLG - ON Semiconductor

July, 2006 − Rev. 3 1Publication Order Number:

MUR180E/D

MUR180E, MUR1100E

MUR1100E is a Preferred Device

SWITCHMODEt

Power Rectifiers

Ultrafast “E” Series with High Reverse

Energy Capability

These state−of−the−art devices are designed for use in switching

power supplies, inverters and as free wheeling diodes.

Features

•10 mjoules Avalanche Energy Guaranteed

•Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

•Ultrafast 75 Nanosecond Recovery Time

•175°C Operating Junction Temperature

•Low Forward Voltage

•Low Leakage Current

•High Temperature Glass Passivated Junction

•Reverse Voltage to 1000 V

•These are Pb−Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Shipped in Plastic Bags; 1,000 per Bag

•Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to

the Part Number

•Polarity: Cathode Indicated by Polarity Band

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MUR180E

MUR1100E

VRRM

VRWM

VR800

1000

Average Rectified Forward Current (Note 1)

(Square Wave Mounting Method #3 Per Note 3) IF(AV) 1.0 @

TA = 95°CA

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz)

IFSM 35 A

Operating Junction Temperature and Storage

Temperature Range TJ, Tstg −65 to

+175 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

ULTRAFAST RECTIFIERS

1.0 AMPERES, 800−1000 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

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PLASTIC

AXIAL LEAD

CASE 59

MARKING DIAGRAM

A = Assembly Location

MUR1x0E = Device Code

x 8 or 10

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MUR1x0E

YYWW G

MUR180E, MUR1100E

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THERMAL CHARACTERISTICS

Charateristics Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Ambient RqJA See Note 3 °C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 Amp, TJ = 150°C)

(iF = 1.0 Amp, TJ = 25°C)

vF1.50

1.75

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 100°C)

(Rated dc Voltage, TJ = 25°C)

iR600

Maximum Reverse Recovery Time

(IF = 1.0 Amp, di/dt = 50 Amp/ms)

(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr 100

Maximum Forward Recovery Time

(IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V) tfr 75 ns

Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 10 mJ

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

ORDERING INFORMATION

Device Package Shipping†

MUR180E Axial Lead* 1000 Units / Bag

MUR180EG Axial Lead*

MUR180ERL Axial Lead* 5000 / Tape & Reel

MUR180ERLG Axial Lead*

MUR1100E Axial Lead* 1000 Units / Bag

MUR1100EG Axial Lead*

MUR1100ERL Axial Lead* 5000 / Tape & Reel

MUR1100ERLG Axial Lead*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*These packages are inherently Pb−Free.

MUR180E, MUR1100E

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ELECTRICAL CHARACTERISTICS

Figure 1. Typical Forward Voltage

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.3 0.90.5 1.3

3.0

0.01

0.03

0.02

0.2

0.1

2.0

0.7

0.3

0.05

0.5

5.0

, INSTANTANEOUS FORWARD CURRENT (AMPS)

2.3

VR, REVERSE VOLTAGE (VOLTS)

0 300200 500 600

1000

0.1

0.01

100

TJ = 175°C

100 400 1000

Figure 2. Typical Reverse Current*

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.0

2.0

3.0

4.0

5.0

PF(AV)

0.5 1.0 1.5 2.0 2.5

TA, AMBIENT TEMPERATURE (°C)

050

2.0

1.0

3.0

5.0

4.0

250

Figure 3. Current Derating

(Mounting Method #3 Per Note 3)

Figure 4. Power Dissipation

3.0

2.0

10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

0.7

0.07

1.0

7.0

1.7 2.1

100°C

TJ = 175°C25°C

800 900700

1.0

, REVERSE CURRENT ( A)

100°C

25°C

150100 200

* The curves shown are typical for the highest voltage device in the

grouping. Typical reverse current for lower voltage selections can be

estimated from these same curves if VR is sufficiently below rated VR.

C, CAPACITANCE (pF)

, AVERAGE POWER DISSIPATION (WATTS)

TJ = 25°C

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

30 40 50

7.0

5.0

TJ = 175°C

RATED VR

RqJA = 50°C/W

SQUARE WAVE

(CAPACITIVELOAD)

IPK

IAV +20

SQUARE WAVE

5.010

1.1 1.5 1.9

MUR180E, MUR1100E

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MERCURY

SWITCH

DUT

40 mH COIL

+VDD

BVDUT

ILID

VDD

t0t1t2t

Figure 6. Test Circuit Figure 7. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in

Figure 6 was used to demonstrate the controlled avalanche

capability of the new “E’’ series Ultrafast rectifiers. A

mercury switch was used instead of an electronic switch to

simulate a noisy environment when the switch was being

opened.

When S 1 is closed at t0 the current in the inductor IL ramps

up linearly; and energy is stored in the coil. At t1 the switch

is opened and the voltage across the diode under test begins

to rise rapidly, due to di/dt effects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped a t

BVDUT and the diode begins to conduct the full load current

which now starts to decay linearly through the diode, and

goes to zero at t2.

By solving the loop equation at the point in time when S1

is opened; and calculating the energy that is transferred to

the diode it can be shown that the total energy transferred is

equal to the ener gy stored in the inductor plus a finite amount

of energy from the VDD power supply while the diode is in

breakdown (from t1 to t2) minus any losses due to finite

component resistances. Assuming the component resistive

elements are small Equation (1) approximates the total

energy transferred to the diode. It can be seen from this

equation that if the VDD voltage is low compared to the

breakdown voltage of the device, the amount of energy

contributed by the supply during breakdown is small and the

total energy can be assumed to be nearly equal to the ener gy

stored in the coil during the time when S1 was closed,

Equation (2).

The oscilloscope picture in Figure 8, shows the

information obtained for the MUR8100E (similar die

construction as the MUR1100E Series) in this test circuit

conducting a peak current of one ampere at a breakdown

voltage of 1300 V, and using Equation (2) the energy

absorbed by the MUR8100E is approximately 20 mjoules.

Although it is not recommended to design for this

condition, the new “E’’ series provides added protection

against those unforeseen transient viruses that can produce

unexplained random failures in unfriendly environments.

WAVAL [1

2LI2

LPKǒBVDUT

BVDUT–VDDǓ

WAVAL [1

2LI2

LPK

Figure 8. Current−Voltage Waveforms

CHANNEL 2:

0.5 AMPS/DIV.

CHANNEL 1:

VDUT

500 VOLTS/DIV.

TIME BASE:

20 ms/DIV.

EQUATION (1):

EQUATION (2):

CH1 CH2 REF REF

CH1

CH2

ACQUISITIONS

SAVEREF SOURCE

1 217:33 HRS

STACK

A20ms953 V VERT500V

50mV

MUR180E, MUR1100E

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Lead Length, L

Mounting

Method 1/8 1/4 1/2 Units

RqJA

65 72

80 87

°C/W

TYPICAL VALUES FOR RqJA IN STILL AIR

Data shown for thermal resistance, junction−to−ambient

(RqJA) for the mountings shown is to be used as typical

guideline values for preliminary engineering or in case the

tie point temperature cannot be measured.

NOTE 3 — AMBIENT MOUNTING DATA

MOUNTING METHOD 1

MOUNTING METHOD 2

MOUNTING METHOD 3

ÉÉÉÉÉÉÉÉÉÉÉ

L L

ÉÉÉÉÉÉÉÉÉÉÉÉ

L L

Vector Pin Mounting

ÉÉ

L = 3/8

Board Ground Plane

P.C. Board with

1−1/2 X 1−1/2 Copper Surface″″

″

MUR180E, MUR1100E

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PACKAGE DIMENSIONS

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F−−− 1.27−−− 0.050

K25.40 −−−1.000 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO−41 OUTLINE SHALL APPLY

4. POLARITY DENOTED BY CATHODE BAND.

5. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

AXIAL LEAD

CASE 59−10

ISSUE U

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES) STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

MUR180E/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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