BC807-16/-25/-40
Taiwan Semiconductor
1 Version: J2001
0.3W, PNP Plastic-Encapsulate Transistor
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 0.008grams (approximately)
PARAMETER VALUE UNIT
VCBO -50 V
VCEO -45 V
VEBO -5 V
IC -0.5 A
hFE 250-600
Package SOT-23
Configuration Single die
(TA = 25°C unless otherwise noted)
Marking code on the device
BC807-16 5A
BC807-25 5B
BC807-40 5C
Power dissipation PD 0.3 W
Collector-base voltage, emitter open IC = -10 μA, IE = 0 VCBO -50 V
Collector-emitter voltage, base open IC = -10 mA, IB = 0 VCEO -45 V
Emitter-base voltage, collector open IE = -1 μA, IC = 0 VEBO -5 V
Collector current, dc IC -0.5 A
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C