5–1
FEATURES
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
• Isolation T est V oltage, 5300 V
RMS
•V
CEsat
0.25 (
≤
0.4) V at I
F
=10 mA, I
C
=2.5 mA
•V
CEO
=70 V
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 11
DESCRIPTION
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage.................................................6 V
Surge Forward Current (t £10 ms)...................1.5 A
Total Power Dissipation..............................100 mW
Derate Linearly from 25
°
C......................1.3 mW/
°
C
DC Forward Current......................................60 mA
Detector
Collector-Emitter Voltage..................................70 V
Collector Current ..........................................50 mA
Collector Current (t
≤
1 ms)..........................100 mA
Total Power Dissipation..............................150 mW
Derate Linearly from 25
°
C......................2.0 mW/
°
C
Package
Isolation Test Voltage (t=1 sec.)........5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C .............................
≥
10
11
Ω
Storage Temperature ...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Junction Temperature ...................................100
°
C
Lead Soldering Time at 260
°
C....................10 sec.
V
DE
Electrical Characteristics
(T
A
=25
°
C)
Symbol Typ. Unit Condition
Emitter
Forward Voltage V
F
1.25
(
≤
1.65) VI
F
=60mA
Reverse Current I
R
0.01 (
≤
10)
µ
AV
R
=6V
Capacitance C
O
25 pF V
R
=0 V,
f=1 MHz
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector BV
CEO
BV
CEO
90 (
≥
70)
7.0 (
≥
6.0) V
VI
C
=10
µ
A
I
E
=10
µ
A
Collector-Emitter Dark
Current I
CEO
2 (
≤
50) nA V
CE
=10 V
Capacitance C
CE
7pFV
CE
=5 V,
f=1 MHz
Package
Collector-Emitter Saturation
Voltage V
CEsat
0.25
(
≤
0.40) VI
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance C
C
0.35 pF
Dimensions in inches (mm)
Pin One I.D.
268 (6.81)
255 (6.48)
34
65
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4° Typ.
.100 (2.54) Typ.
10° Typ.
3°–9°
.305 Typ.
(7.75) Typ.
.022 (.56)
.018 (.46) .012 (.30)
.008 (.20)
.135 (3.43
.115 (2.92
12
87
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
8
7
6
5
Emitter
Collecto
Emitter
Collecto
Anode
Cathode
Anode
Cathode
1
2
3
4
ILD610 SERIES
DUAL PHOTOTRANSISTOR
OPTOCOUPLER