UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R206-026,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC817 / BC818
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage
BC807
BC808
VCES
-50
-30
V
V
Collector-Emitter Voltage
BC807
BC808
VCE0
-45
-25
V
V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) Ic -800 mA
Collector Dissipation Pc -310 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCEO Ic=-10mA, IB=0
-45
-25
V
V
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCES IC=-0.1mA, VBE=0
-50
-30
V
V
Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA, Ic=0 -5 V
Collector Cut-off Current ICES VCE=-25V, VBE=0 -100 nA
Emitter Cut-off Current IEBO VEB=-4V, Ic=0 -100 nA