Max.
N-Channel P-Channel
VDS Drain-to-Source Voltage 12 -12
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.3 -3.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.2 -2.5
IDM Pulsed Drain Current 26 -13
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ±12 ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range °C
N-Ch P-Ch
VDSS 12V -12V
RDS(on) 0.034Ω 0.150Ω
HEXFET® Power MOSFET
6/2/03
IRF7338
Description
www.irf.com 1
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Parameter Units
A
Absolute Maximum Ratings
-55 to + 150
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
SO-8
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top V iew
8
1
2
3
45
6
7
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
PD - 94372C
IRF7338
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
N-Ch 12 — — VGS = 0V, ID = 250µA
P-Ch -12 — — VGS = 0V, ID = -250µA
N-Ch — 0.01 — Reference to 25°C, ID = 1mA
P-Ch — -0.01 — Reference to 25°C, ID = -1mA
— — 0.034 VGS = 4.5V, ID = 6.0A
— — 0.060 VGS = 3.0V, ID = 2.0A
— — 0.150 VGS = -4.5V, ID = -2.9A
— — 0.200 VGS = -2.7V, ID = -1.5A
N-Ch 0.6 — 1.5 VDS = VGS, ID = 250µA
P-Ch -0.40 — -1.0 VDS = VGS, ID = -250µA
N-Ch 9.2 — — VDS = 6.0V, ID = 6.0A
P-Ch 3.5 — — VDS = -6.0V, ID = -1.5A
N-Ch — — 20 VDS = 9.6V, VGS = 0V
P-Ch — — -1.0 VDS = -9.6 V, VGS = 0V
N-Ch — — 50 VDS = 9.6V, VGS = 0V, TJ = 55°C
P-Ch — — -25 VDS = -9.6V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-Ch –– — ±100 nA VGS = ± 12V
P-Ch — — ±100 VGS = ± 8.0V
N-Ch — — 8.6
P-Ch — — 6.6
N-Ch — — 1.9
P-Ch — — 1.3
N-Ch — — 3.9
P-Ch — — 1.6
N-Ch — 6.0 —
P-Ch — 9.6 —
N-Ch — 7.6 —
P-Ch — 13 —
N-Ch — 26 —
P-Ch — 27 —
N-Ch — 34 —
P-Ch — 25 —
N-Ch — 640 —
P-Ch — 490 —
N-Ch — 340 —
P-Ch — 80 —
N-Ch — 110 —
P-Ch — 58 —
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
pF
N-Channel
ID = 6.0A, VDS = 6.0V, VGS = 4.5V
P-Channel
ID = -2.9A, VDS = -9.6V, VGS = -4.5 V
N-Channel
VDD = 6.0V, ID = 1.0A, RG = 6.0Ω,
VGS = 4.5V
P-Channel
VDD = -6.0V, ID = -2.9A, RG = 6.0Ω,
VGS = -4.5V
N-Channel
VGS = 0V, VDS = 9.0V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -9.0V, ƒ = 1.0KHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 6.3
P-Ch — — -3.0
N-Ch — — 26
P-Ch — — -13
N-Ch — — 1.3 TJ = 25°C, IS = 1.7A, VGS = 0V
P-Ch — — -1.2 TJ = 25°C, IS = -2.9A, VGS = 0V
N-Ch — 51 76
P-Ch — 37 56
N-Ch — 43 64
P-Ch — 20 30
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.9A, di/dt = -100A/µs
Surface mounted on 1 in square Cu board.
The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
IRF7338
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
0.1 110
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
1.5V
20µs P ULS E WIDTH
Tj = 25°C
VGS
TOP 7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
BOTTOM 1.5V
0.1 110
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
1.5V
20µs P ULS E WIDTH
Tj = 150°C
VGS
TOP 7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
B O TT OM 1. 5V
1.0 2.0 3.0 4.0
VGS, Gate-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (
A)
TJ = 25°C
TJ = 150°C
VDS = 10V
20µs PULSE WIDTH
0.4 0.6 0.8 1.0 1.2 1.4
VSD, S ource-toDrain Voltage (V )
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
IRF7338
4www.irf.com
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
0 5 10 15 20 25 30
ID , Drain Current (A)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 3.0V
VGS = 4.5V
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate -to -S ource Voltage (V)
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 6.3A
Fig 8. Typical Power Vs. Time
0.00 0.00 0.00 0.01 0.10 1.00 10.00
Time (sec)
0
20
40
60
80
Power (W)
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.3A
IRF7338
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + C gd , C ds
SHORTED
Crss = C
gd
Coss = C
ds + C
gd
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Respons e (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0.0 2.0 4.0 6.0 8.0 10.0 12.0
QG Total Gat e Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 12V
ID= 6.0A
IRF7338
6www.irf.com
Fig 12. Maximum Drain Current Vs.
Case Temperature
Fig 13a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 13b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
N-Channel
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
VGS
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7338
www.irf.com 7
Fig 17. Typical Transfer Characteristics
Fig 16. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Fig 18. Typical Source-Drain Diode
Forward Voltage
P-Channel
0.1 110
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.5V
20µs P ULSE W IDTH
Tj = 25°C
VGS
TOP -7.5V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
B OTTOM -1. 5V
0.1 110
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.5V
20µs P ULSE W IDTH
Tj = 150°C
VGS
TOP -7.5V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM -1.5V
1.0 2.0 3.0 4.0
-VGS , Gate-to-Source Voltage (V)
1
10
100
-ID, Drain-to-Source Current (
A)
TJ = 25°C
TJ = 150°C
VDS = -10V
20µs PULSE WIDTH
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD, Source-toDrain Voltage (V )
0.1
1.0
10.0
100.0
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
IRF7338
8www.irf.com
Fig 19. Normalized On-Resistance
Vs. Temperature
Fig 22. Maximum Avalanche Energy
Vs. Drain Current
Fig 20. Typical On-Resistance Vs. Drain
Current
Fig 21. Typical On-Resistance Vs. Gate
Voltage
P-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-3.0A
02468101214
-ID , Drain Current (A)
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.7V
VGS = -4. 5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-VGS, Gate -to -S ource V oltage (V)
0.06
0.08
0.10
0.12
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -3.0A
0.00 0.00 0.00 0.01 0.10 1.00 10.00
Time (sec)
0
20
40
60
80
Power (W)
IRF7338
www.irf.com 9
Fig 24. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 23. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
110 100
-VDS, Drain-to-S ource V oltage (V )
0
200
400
600
800
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + C gd , C ds
SHORTED
Crss = C
gd
Cos s = C
ds + C
gd
0246810
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
-VGS, Gate-to-Source Voltage (V)
VDS= -9.6V
VDS= -6.0V
ID= -2.9A
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7338
10 www.irf.com
Fig 26. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 27a. Switching Time Test Circuit
Fig 27b. Switching Time Waveforms
Fig 28b. Gate Charge Test Circuit
Fig 28a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
25 50 75 100 125 150
0.0
0.6
1.2
1.8
2.4
3.0
T , Cas e T e mperature ( C)
-I , Dr ain Curr ent ( A)
°
C
D
IRF7338
www.irf.com 11
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L I ME T E R SINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JE DEC OUT LINE MS -012AA.
NOT E S :
1. DIME NSIONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MILLIME T E RS [INCHE S ].
5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LE AD F OR S OLDERING T O
A S UBS T RAT E.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART NUMBER
LOT CODE
WW = WE E K
Y = LAS T DIGIT OF T HE YEAR
DAT E CODE (YWW)
IRF7338
12 www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA -541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENS ION : MILLIMETER.
2. ALL DIMEN SIONS ARE SH OWN IN MILLIMETERS(I NCHES ).
3. OUTLINE CONFORMS T O EIA-481 & EI A-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.6/03
