TIP48 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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!  

. . . designed for line operated audio output amplifier, Switchmode power supply

drivers and other switching applications.

•250 V to 400 V (Min) — VCEO(sus)

•1 A Rated Collector Current

•Popular TO–220 Plastic Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

TIP47

ÎÎÎ

TIP48

ÎÎÎ

TIP49

ÎÎÎÎ

TIP50

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

250

ÎÎÎ

300

ÎÎÎ

350

ÎÎÎÎ

400

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

350

ÎÎÎ

400

ÎÎÎ

450

ÎÎÎÎ

500

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

1.0

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

0.6

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎ

Unclamped Inducting Load

Energy (See Figure 8)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

Figure 1. Power Derating

TC, CASE TEMPERATURE (

0 100

160

60 80

40 140

20 120

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP47/D

 Motorola, Inc. 1995









1.0 AMPERE

POWER TRANSISTORS

NPN SILICON

250–300–350–400 VOLTS

40 WATTS

*Motorola Preferred Device



CASE 221A–06

TO–220AB

REV 1

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) TIP47

(IC = 30 mAdc, IB = 0) TIP48

TIP49

TIP50

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

250

300

350

400

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) TIP47

(VCE = 200 Vdc, IB = 0) TIP48

(VCE = 250 Vdc, IB = 0) TIP49

(VCE = 300 Vdc, IB = 0) TIP50

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0) TIP47

(VCE = 400 Vdc, VBE = 0) TIP48

(VCE = 450 Vdc, VBE = 0) TIP49

(VCE = 500 Vdc, VBE = 0) TIP50

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1.0 Adc, VCE = 10 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

150

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 1.0 Adc, VCE = 10 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulse width

300 µs, Duty Cycle

2.0%.

TURN–ON PULSE

APPROX

+11 V

Vin 0

VEB(off) t1

APPROX

+11 V

Vin

TURN–OFF PULSE

≤

7.0 ns

100 < t2 < 500

t3 < 15 ns

DUTY CYCLE

≈

2.0%

APPROX –9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

–4.0 V

Figure 2. Switching Time Equivalent Circuit

0.02

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPS)

0.01 0.1 2.01.0

TJ = 25

VCC = 200 V

IC/IB = 5.0

t, TIME ( s)

0.5

0.2

0.1

0.05

0.05 0.5

0.02

1.0

0.2

   

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 1.0 100

JC(t) = r(t) R

JC = 3.125

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10 205.0 50 500

Figure 5. Active Region Safe Operating Area

0.02

0.05

SECONDARY BREAKDOWN LIMITED

THERMALLY LIMITED @ 25

BONDING WIRE LIMITED

1.0 ms

100

0.2

0.1

5.0

2.0

IC, COLLECTOR CURRENT (AMPS)

CURVES APPLY

BELOW RATED VCEO

1.0

0.5

100 200

500

≤

TIP47

TIP48

TIP49

TIP50

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05 0.1 0.20.02 0.5

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Turn–Off Time

5.0

t, TIME ( s)

2.0

1.0

0.5

0.2

0.1

0.05 1.0 2.0

TJ = 25

VCC = 200 V

IC/IB = 5.0

IC, COLLECTOR CURRENT (AMPS)

+4.5

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+3.5

+2.5

+1.5

–0.5

–1.5

–2.5

*APPLIES FOR IC/IB

≤

hFE/5

VC FOR VCE(sat)

VB FOR VBE

Figure 7. Temperature Coefficients

0.02 0.05 0.1 0.2 0.5 1.0 2.0

+25

C to +150

–55

C to +25

+25

C to +150

–55

C to +25

+0.5

   

4 Motorola Bipolar Power Transistor Device Data

Figure 8. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.63 A.

INPUT 50 MJE171 RBB1 =

150

Ω

100 mH

RBB2 =

100

Ω

VBB2 =

VBB1 = 10 V

VCE MONITOR

TUT

VCC = 20 V

IC MONITOR

RS =

0.1

Ω

0.63 A

0 V

–5 V

≈

3 ms

(SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

10 V

100 ms

VCE(sat)

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

Figure 9. DC Current Gain

100

200

0.04 0.06 0.2 2.00.02

6.0

4.0

0.1

Figure 10. “On” Voltages

VCE = 10 V

2.0 0.6 1.00.4

TJ = 150

–55

1.4

0.02 IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

00.04 0.06 0.1 0.2 0.4 0.6

V, VOLTAGE (VOLTS)

1.0 2.0

VBE(sat) @ IC/IB = 5.0 V

VBE(on) @ VCE = 4 V

VCE(sat) @ IC/IB = 5.0 V

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

6 Motorola Bipolar Power Transistor Device Data

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