BCV27 - ON SEMICONDUCTOR

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BCV27 — NPN Darlington Transistor

BCV27 Rev. 1.1.0

October 2014

BCV27

NPN Darlington Transistor

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

BCV27 FF SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 30 V

VCBO Collector- Base Voltage 40 V

VEBO Emitter-Base Voltage 10 V

ICCollector Current - Continuous 1.2 A

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Description

This device is designed for applications requiring

extremely high c urrent gai n at coll ector cur rent s to 1. 0 A.

Sourced from process 05.

SOT-23

Mark: FF

BCV27 — NPN Darlington Transistor

BCV27 Rev. 1.1.0 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation 350 mW

Derate Above 25°C 2.8 mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

V(BR)CEO Collector-Emitter Breakdo w n Voltage IC = 10 mA, IB = 0 30 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 0.1 μA

IEBO Emitter Cut-Off Current VEB = 10 V, IC = 0 0.1 μA

hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V 4000

IC = 10 mA, VCE = 5.0 V 10000

IC = 100 mA, VCE = 5.0 V 20000

VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V

fTCurrent Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,

f = 100 MHz 220 MHz

CcCollector Capacitance VCB = 30 V, IE = 0,

f = 1.0 MHz 3.5 pF

BCV27 — NPN Darlington Transistor

BCV27 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation V olt age vs.

Collector Current Figure 4. Base Emitte r On Voltage vs.

Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with

Resistance Between Emitter-Base

0.001 0.01 0.1 1

10 0

15 0

20 0

25 0

I - COLLECTOR CURRENT (A)

h - TYPIC AL PULSED CURREN T GAIN (K)

25 °C

125 °C

- 40 °C

V = 5V

1 10 100 1000

0. 4

0. 8

1. 2

1. 6

I - COLLECTOR CURRENT (mA)

V - COLLECTOR EM ITTE R VOLTA GE (V)

CESAT

25°C

- 40 °C

125 °C

β= 1000

1 10 100 1000

0. 4

0. 8

1. 2

1. 6

I - COLLECTOR CURRE NT (mA)

V - BASE EMITTE R VOLTAGE (V)

BESAT

25 °C

- 40 °C

125 °C

β= 1000

1 10 100 1000

0. 4

0. 8

1. 2

1. 6

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER ON VOLTAGE (V)

BEON

V = 5V

- 40 °C

25 °C

125 °C

25 50 75 100 125

0.01

0. 1

10 0

T - AMBIENT TEMP ERATURE ( C)

I - C O L LE CTOR CU RR EN T ( n A)

CBO

V = 30V

0.1 1 10 100 1000

59.5

60.5

61.5

62.5

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

CER

BCV27 — NPN Darlington Transistor

BCV27 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Input and Output Capacitance vs.

Reverser Voltage Figure 8. Gain Bandwidth Product vs.

Collector Current

Figure 9. Power Dissip ation vs. Ambient T emperat ure

0.1 1 10 100

V - COLLECTOR VOLTAGE(V)

CAPACITANCE (pF)

Cib

Cob

f = 1.0 MHz

1102050100150

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

f - GAIN BANDWIDTH PRODUCT (MHz)

V = 5V

0 25 50 75 100 125 150

100

150

200

250

300

350

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

SOT-23

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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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