2N5038G - ON SEMICONDUCTOR

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 12

1Publication Order Number:

2N5038/D

2N5038

NPN Silicon Transistors

Fast switching speeds and high current capacity ideally suit these

parts for use in switching regulators, inverters, wide-band amplifiers

and power oscillators in industrial and commercial applications.

Features

•High Speed - tf = 0.5 ms (Max)

•High Current - IC(max) = 30 Amps

•Low Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps

•Pb-Free Package is Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO 90 Vdc

Collector-Base Voltage VCBO 150 Vdc

Collector-Emitter Voltage VCEV 150 Vdc

Emitter-Base Voltage VEBO 7 Vdc

Collector Current - Continuous

Peak (Note 2)

ICM

Adc

Base Current - Continuous IB5 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD140

0.8

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg -65 to +200 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction-to-Case RqJC 1.25 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.

Figure 1. Switching Time Test Circuit

+11 V 10 W

-5 V

1N4933

VCC

2.5

IC = 12 AMPS

IB1 = IB2 = 1.2 AMPS

-9 V

2N5038

+30 V

PW = 20 ms

DUTY CYCLE = 1%

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

20 AMPERE

NPN SILICON

POWER TRANSISTORS

90 VOLTS - 140 WATTS

http://onsemi.com

MARKING DIAGRAMS

2N5038G

AYYWW

MEX

TO-204AA (TO-3)

CASE 1-07

STYLE 1

G = Pb-Free Package

A = Assembly Location

YY = Year

WW = Work Week

MEX = Country of Origin

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

2N5038

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Sustaining Voltage (Note 4)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 V)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎ

ICEX

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

(VEB = 7 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 4)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 12 Adc, VCE = 5 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

ÎÎÎÎ

3.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer

Ratio (IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)

ÎÎÎÎÎ

|hfe|

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RESISTIVE LOAD

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

0.5

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

1.5

ÎÎÎ

3. Indicates JEDEC Registered Data.

4. Pulse Test: Pulse Width v 300, ms, Duty Cycle v 2%.

ORDERING INFORMATION

Device Package Shipping

2N5038 TO-204

100 Units / Tray

2N5038G TO-204

(Pb-Free)

100

Figure 2. Forward Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1 1 10 100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

IC, COLLECTOR CURRENT (AMPS)

0.5

0.2

2 3 5 7 20 30 50

TC = 25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

Second breakdown pulse limits are valid for duty cycles

to 10%. At high case temperatures, thermal limitations may

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

2N5038

http://onsemi.com

PACKAGE DIMENSIONS

CASE 1-07

TO-204AA (TO-3)

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

-T- SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

-Q-

-Y-

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR