Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -80 V Emitter to base voltage VEBO -5 V Peak collector current ICP -6 A Collector current IC -3 A Collector power TC=25C dissipation Ta=25C 35 PC Junction temperature Tj Storage temperature Tstg 4.20.2 2.70.2 7.50.2 16.70.3 (TC=25C) 5.50.2 3.10.1 4.0 Optimum for 25W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < -2.5V Full-pack package which can be installed to the heat sink with one screw 14.00.5 4.20.2 1.40.1 Solder Dip Features Unit: mm 10.00.2 0.70.1 For power amplification Complementary to 2SD1890 0.80.1 0.5 +0.2 -0.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) Internal Connection C W 2 150 C -55 to +150 C 1.30.2 B E Electrical Characteristics (TC=25C) Parameter Symbol Conditions min typ max Unit ICBO VCB = -100V, IE = 0 -100 A ICEO VCE = -80V, IB = 0 -100 A Emitter cutoff current IEBO VEB = -5V, IC = 0 -100 A Collector to emitter voltage VCEO IC = -30mA, IB = 0 -80 hFE1 VCE = -5V, IC = -1A 2000 hFE2* VCE = -5V, IC = -2A 5000 Collector cutoff current Forward current transfer ratio V 30000 Collector to emitter saturation voltage VCE(sat) IC = -2A, IB = -2mA -2.5 V Base to emitter saturation voltage VBE(sat) IC = -2A, IB = -2mA -3.0 V Transition frequency fT VCE = -10V, IC = - 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = -2A, IB1 = -2mA, IB2 = 2mA, VCC = -50V 20 MHz 2.0 s 0.7 s 0.7 s Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SB1250 PC -- Ta IC -- VCE 40 -5 (1) 30 20 (4) (2) 10 IB=-3mA -4 - 0.5mA - 0.4mA -3 - 0.3mA - 0.2mA -2 - 0.1mA -1 - 0.05mA 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) -2 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) -8 -10 -12 30000 25C TC=100C -25C 3000 1000 -3 TC=-25C 25C 100C -1 -3 -10 -30 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -100 Collector current IC (A) -1 -3 -10 Collector current IC (A) ton, tstg, tf -- IC Area of safe operation (ASO) 100 -100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C 10 3 ton tstg 1 Non repetitive pulse TC=25C -30 Collector current IC (A) 30 tf 0.3 -10 -3 ICP t=1ms IC 10ms -1 DC - 0.3 0.1 - 0.1 - 0.03 0.03 0.01 0 -2 -4 25C -3 -6 Collector current IC (A) -8 -25C -1 - 0.1 - 0.1 - 0.3 - 0.01 -1 -1 -3 -10 -30 -100 Collector current IC (A) Cob -- VCB 10000 -10 TC=100C 1000 VCE=-5V -30 - 0.1 - 0.1 - 0.3 -10 hFE -- IC - 0.3 Switching time ton,tstg,tf (s) -6 100000 IC/IB=1000 -1 -30 Collector to emitter voltage VCE (V) VBE(sat) -- IC -100 -4 Collector output capacitance Cob (pF) 20 IC/IB=1000 - 0.3 (3) 0 Collector to emitter saturation voltage VCE(sat) (V) 50 -100 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) -- IC -6 Collector current IC (A) Collector power dissipation PC (W) 60 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) IE=0 f=1MHz TC=25C 300 100 30 10 3 1 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Power Transistors 2SB1250 Rth(t) -- t Thermal resistance Rth(t) (C/W) 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3