SA58637BS,118 - NXP - Product.Live

1. General description

The SA58637 is a two-channel audio ampliﬁer in an HVQFN20 package. It provides

power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is

comprised of two Bridge-Tied Load (BTL) ampliﬁers with a complementary PNP-NPN

output stage and standby/mute logic. The SA58637 is housed in a 20-pin HVQFN

package, which has an exposed die attach paddle enabling reduced thermal resistance

and increased power dissipation.

2. Features

nLow junction-to-ambient thermal resistance using exposed die attach paddle

nGain can be ﬁxed with external resistors from 6 dB to 30 dB

nStandby mode controlled by CMOS-compatible levels

nLow standby current < 10 µA

nNo switch-on/switch-off plops

nHigh power supply ripple rejection: 50 dB minimum

nElectroStatic Discharge (ESD) protection

nOutput short circuit to ground protection

nThermal shutdown protection

3. Applications

nProfessional and amateur mobile radio

nPortable consumer products: toys and games

nPersonal computer remote speakers

SA58637

2 × 2.2 W BTL audio ampliﬁer

Rev. 01 — 25 February 2008 Product data sheet

Product data sheet Rev. 01 — 25 February 2008 2 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

4. Quick reference data

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase

being equal to the DC output offset voltage divided by RL.

[2] Power supply rejection ratio is measured at the output with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is

applied to the positive supply rail.

[3] Power supply rejection ratio is measured at the output, with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of

100 mV (RMS), which is applied to the positive supply rail.

5. Ordering information

Table 1. Quick reference data

=6V;T

amb

=25

C; R

Ω

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise

speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage operating 2.2 9 18 V

Iqquiescent current RL=∞Ω [1] -1522mA

Istb standby current VMODE =V

CC --10µA

Pooutput power THD+N = 10 % 1.2 1.5 - W

THD+N = 0.5 % 0.9 1.1 - W

THD+N = 10 %;

VCC = 9 V; application

demo board

- 2.2 - W

THD+N total harmonic

distortion-plus-noise Po= 0.5 W - 0.15 0.3 %

PSRR power supply rejection

ratio 1 kHz [2] 50 - - dB

100 Hz to 20 kHz [3] 40 - - dB

Table 2. Ordering information

Type number Package

Name Description Version

SA58637BS HVQFN20 plastic thermal enhanced very thin quad ﬂat package;

no leads; 20 terminals; body 6 ×5×0.85 mm SOT910-1

Product data sheet Rev. 01 — 25 February 2008 3 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

6. Block diagram

Fig 1. Block diagram of SA58637

SA58637

VCCL

OUTL−

INL+

INL−

RGND

OUTL+

002aad577

20 kΩ

STANDBY/MUTE LOGIC

VCCL

VCCR

OUTR−

INR+

INR−

SVR

OUTR+

20 kΩ

STANDBY/MUTE LOGIC

MODE 2

SELECT 4

LGND

GND

n.c.

Product data sheet Rev. 01 — 25 February 2008 4 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

7. Pinning information

7.1 Pinning

7.2 Pin description

[1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept ﬂoating.

When connected to the ground plane, the PCB can be used as heatsink.

Fig 2. Pin conﬁguration for HVQFN20

002aad578

OUTR−

n.c.

INR+SELECT

INL+SVR

OUTL−OUTL+

Transparent top view

INR−12

INL−15

134

MODE 2

OUTR+ 6

161

terminal 1

index area

SA58637BS 14

VCCL

GND

LGND

GND19

VCCR

GND

RGND

GND 8

Table 3. Pin description

Symbol Pin Description

OUTL+ 1 positive loudspeaker terminal, left channel

MODE 2 operating mode select (standby, mute, operating)

SVR 3 half supply voltage, decoupling ripple rejection

SELECT 4 BTL loudspeaker channel select (left, right, both channels)

n.c. 5 not connected

OUTR+ 6 positive loudspeaker terminal, right channel

RGND 7 ground, right channel

GND 8, 9, 18, 19 ground[1]

VCCR 10 supply voltage; right channel

OUTR−11 negative loudspeaker terminal, right channel

INR−12 negative input, right channel

INR+ 13 positive input, right channel

INL+ 14 positive input, left channel

INL−15 negative input, left channel

OUTL−16 negative output terminal, left channel

VCCL 17 supply voltage, left channel

LGND 20 ground, left channel

Product data sheet Rev. 01 — 25 February 2008 5 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

8. Functional description

The SA58637 is a two-channel BTL audio ampliﬁer capable of delivering 2 ×1.5 W output

power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of

delivering 2 ×2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power

supply. Using the MODE pin, the device can be switched to standby and mute condition.

The device is protected by an internal thermal shutdown protection mechanism. The gain

can be set within a range of 6 dB to 30 dB by external feedback resistors.

8.1 Power ampliﬁer

The power ampliﬁer is a Bridge-Tied Load (BTL) ampliﬁer with a complementary

PNP-NPN output stage. The voltage loss on the positive supply line is the saturation

voltage of a PNP power transistor and on the negative side the saturation voltage of an

NPN power transistor. The total voltage loss is < 1 V.

8.2 Mode select pin (MODE)

The device is in Standby mode (with a very low current consumption) if the voltage at the

MODE pin is greater than VCC −0.5 V, or if this pin is ﬂoating. At a MODE voltage in the

range between 1.5 V and VCC −1.5 V the ampliﬁer is in a mute condition. The mute

condition is useful to suppress plop noise at the output, caused by charging of the input

capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V

(see Figure 6).

8.3 SELECT output conﬁguration

The outputs differentially drives the speakers, so there is no need for coupling capacitors

(see Figure 3). If the voltage at the SELECT pin is in the range between 1.5 V and

VCC −1.5 V, or if it is kept ﬂoating, then both channels are operational. If the SELECT pin

is set to a logic LOW or grounded, then only the right channel is operational and the left

channel is in Standby mode. If the SELECT pin is set to logic HIGH or connected to VCC,

then only the left channel is operational and right channel is in Standby mode. Setting the

SELECT pin to logic LOW or a logic HIGH voltage results in a reduction of quiescent

current consumption by a factor of approximately 2. Switching the SELECT pin during

operation is not plop-free, because the input capacitor of the channel which is coming out

of standby needs to be charged ﬁrst. For plop-free channel selecting the device has ﬁrst to

be set in mute condition with the MODE pin (between 1.5 V and VCC −1.5 V). The

SELECT pin is then set to the new level and after a delay the MODE pin is set to a LOW

level. The delay needed depends on the values of the input capacitors and the feedback

resistors. Time needed is approximately 10 ×C1 ×(R1 + R2), so approximately

0.6 seconds for the values shown in Figure 3.

Table 4. Control pins MODE and SELECT versus status of output channels

Voltage levels at control pins at V

= 5 V; for other voltage levels see Figure 6 and Figure 7.

Control pin Status of output channel Typical Iq (mA)

MODE SELECT Left channel Right channel

HIGH[1]/n.c.[2] X[3] standby standby 0

HVCC[4] HVCC[4]/n.c.[2] mute mute 15

LOW[5] HVCC[4]/n.c.[2] on on 15

Product data sheet Rev. 01 — 25 February 2008 6 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

[1] HIGH = VSELECT >V

CC −0.5 V.

[2] n.c. = not connected or ﬂoating.

[3] X = don’t care.

[4] HVCC = 1.5 V < VSELECT <V

CC −1.5 V.

[5] LOW = VSELECT < 0.5 V.

9. Limiting values

10. Thermal characteristics

[1] Thermal resistance is 22 K/W with DAP soldered to 64.5 mm2 (10 in2), 28.3 g (1 oz) copper heat spreader.

11. Static characteristics

HVCC[4]/LOW[5] HIGH[1] mute/on standby 8

HVCC[4]/LOW[5] HVCC[4]/n.c.[2] mute/on mute/on 15

HVCC[4]/LOW[5] LOW[5] standby mute/on 8

Table 4. Control pins MODE and SELECT versus status of output channels

…continued

Voltage levels at control pins at V

= 5 V; for other voltage levels see Figure 6 and Figure 7.

Control pin Status of output channel Typical Iq (mA)

MODE SELECT Left channel Right channel

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage operating −0.3 +18 V

VIinput voltage −0.3 VCC + 0.3 V

IORM repetitive peak output current - 1 A

Tstg storage temperature non-operating −55 +150 °C

Tamb ambient temperature operating −40 +85 °C

VCC(sc) supply voltage (short circuit) - 10 V

Ptot total power dissipation - 2.2 W

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-a) thermal resistance from

junction to ambient in free air 80 K/W

with heat spreader [1] 22 K/W

Rth(j-sp) thermal resistance from

junction to solder point 3 K/W

Table 7. Static characteristics

=6V; T

amb

=25

C; R

Ω

; V

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage operating 2.2 9 18 V

Iqquiescent current RL=∞Ω [1] -1522mA

Istb standby current VMODE =V

CC --10µA

Product data sheet Rev. 01 — 25 February 2008 7 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output

offset voltage divided by RL.

[2] The DC output voltage with respect to ground is approximately 0.5 ×VCC.

12. Dynamic characteristics

[1] Gain of the ampliﬁer is 2 ×(R2 / R1) in test circuit of Figure 3.

[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance

of RS=0Ω at the input.

[3] Power supply rejection ratio is measured at the output with a source impedance of RS=0Ω at the input. The ripple voltage is a

sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[4] Power supply rejection ratio is measured at the output, with a source impedance of RS=0Ω at the input. The ripple voltage is a

sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.

VOoutput voltage [2] - 2.2 - V

∆VO(offset) differential output voltage offset - - 50 mV

IIB input bias current pins INL+, INR+ - - 500 nA

pins INL−, INR−- - 500 nA

VMODE voltage on pin MODE operating 0 - 0.5 V

mute 1.5 - VCC −1.5 V

standby VCC −0.5 - VCC V

IMODE current on pin MODE 0 V < VMODE <V

CC --20µA

VSELECT voltage on pin SELECT both channels on 1.5 - VCC − 1.5 V

left channel on VCC −0.5 - VCC V

right channel on GND - 0.5 V

II(SELECT) input current on pin SELECT VSELECT = 0 V - - 100 µA

Table 7. Static characteristics

…continued

=6V; T

amb

=25

C; R

Ω

; V

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Table 8. Dynamic characteristics

=6V; T

amb

=25

C; R

Ω

; f = 1 kHz; V

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power THD+N = 10 % 1.2 1.5 - W

THD+N = 0.5 % 0.9 1.1 - W

THD+N = 10 %; VCC =9V;

application demo board - 2.2 - W

THD+N total harmonic

distortion-plus-noise Po= 0.5 W - 0.15 0.3 %

Gv(cl) closed-loop voltage gain [1] 6 - 30 dB

∆Zidifferential input impedance - 100 - kΩ

Vn(o) output noise voltage [2] - - 100 µV

PSRR power supply rejection ratio 1 kHz [3] −50--dB

100 Hz to 20 kHz [4] −40--dB

VO(mute) mute output voltage mute condition [5] - - 200 µV

αcs channel separation −40--dB

Product data sheet Rev. 01 — 25 February 2008 8 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

13. Application information

13.1 BTL application

Tamb =25°C, VCC = 9 V, f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass 22 Hz to

22 kHz. The single-ended input and BTL differential output diagram is shown in Figure 3.

Pins 8, 9, 18 and 19 connected to ground.

Fig 3. Application diagram of SA58637 single-ended input and BTL differential output

conﬁguration

001aah746

50 kΩ

SA58637

OUTL−

INL+

INL−

GND

SVR

OUTL+

MODE

47 µF

1 µF

VIRL

100 µF100 nF

VCC

50 kΩ

OUTR−

INR+

INR−

OUTR+

13 11

1 µF

VIRL

SELECT 4

10 kΩ

Gain left 2 R2

-------

×=

Gain right 2 R4

-------

×=

Product data sheet Rev. 01 — 25 February 2008 9 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

14. Test information

14.1 Static characterization

The quiescent current has been measured without any load impedance (Figure 4).

Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching

levels of the mute and standby respectively depends on the supply voltage level.

RL = ∞Ω Band-pass = 22 Hz to 22 kHz.

(1) VCC =3V.

(2) VCC =5V.

(3) VCC =12V.

Fig 4. Quiescent current as a function of supply

voltage Fig 5. Output voltage as a function of voltage on pin

MODE

Fig 6. Voltage on pin MODE as a function of supply voltage

(mA)

VCC (V)

020168124

002aac081 002aac089

VMODE (V)

10−1102

101

VO (V)

10−6

10−5

10−4

10−3

10−2

10−1

(1) (3)(2)

VMODE

(V)

VCC (V)

0161248

002aac090

mute

standby

operating

Product data sheet Rev. 01 — 25 February 2008 10 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

(1) Left channel on

(2) Left channel standby

(3) Right channel on

(4) Right channel standby

(5) Left channel + right channel on

Fig 7. Voltage on pin SELECT as a function of supply voltage

VCC (V)

0 16 201248

002aad579

VSELECT

(V)

(3)

VCC (5)

(4)

(1)

(2)

Product data sheet Rev. 01 — 25 February 2008 11 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

14.2 BTL dynamic characterization

The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 8)

was measured with a low-pass ﬁlter of 80 kHz. The value of capacitor C3 inﬂuences the

behavior of PSRR at low frequencies; increasing the value of C3 increases the

performance of PSRR.

Po= 0.5 W; Gv=20dB.

(1) VCC =6V; R

L=8Ω.

(2) VCC = 7.5 V; RL=16Ω.

VCC =6V; V

O=2V; R

L=8Ω.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv= 6 dB.

Fig 8. Total harmonic distortion-plus-noise as a

function of frequency Fig 9. Channel separation as a function of frequency

VCC =6V; R

S=0Ω; Vripple = 100 mV.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv= 6 dB.

Fig 10. Power supply rejection ratio as a function of frequency

002aac083

f (Hz)

10 105

104

102103

10−1

THD+N

(%)

10−2

(1)

(2)

002aac084

f (Hz)

10 105

104

102103

−100

−70

−80

−90

−60

αcs

(dB) (1)

(2)

(3)

002aac085

f (Hz)

10 105

104

102103

−60

−40

−20

PSRR

(dB)

−80

(1)

(2)

(3)

Product data sheet Rev. 01 — 25 February 2008 12 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

14.3 Thermal behavior

The measured thermal performance of the HVQFN20 package is highly dependent on the

conﬁguration and size of the heat spreader on the application demo board. Data may not

be comparable between different semiconductor manufacturers because the application

demo boards and test methods are not standardized. The thermal performance of a

package for a speciﬁc application may also differ from those presented here because the

conﬁguration of the application boards copper heat spreader may be signiﬁcantly different.

NXP Semiconductors uses FR-4 type application boards with 28.3 g (1 oz) copper traces

with solder coating.

The demo board (see Figure 16) has a 28.3 g (1 oz) copper heat spreader that runs under

the IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20

package. The heat spreader is symmetrical and provides a heat spreader on both top and

bottom of the PCB. The heat spreader on top and bottom side of the demo board is

connected through 2 mm diameter plated through holes. Directly under the DAP (Die

Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total

top and bottom heat spreader area is 64.5 mm2 (10 in2).

The junction to ambient thermal resistance, Rth(j-a) = 22 K/W for the HVQFN20 package

when the exposed die attach paddle is soldered to a 32.3 mm2(5 in2) area of 28.3 g (1 oz)

copper heat spreader on the demo PCB. The maximum sine wave power dissipation for

Tamb =25°C is:

Thus, for Tamb =60°C the maximum total power dissipation is:

The power dissipation as a function of ambient temperature curve (Figure 11) shows the

power derating proﬁles with ambient temperature for three sizes of heat spreaders. For a

more modest heat spreader using a 32.3 mm2(5 in2) area on the top or bottom side of the

PCB, the Rth(j-a) is 31 K/W. When the package is not soldered to a heat spreader, the

Rth(j-a) increases to 60 K/W.

150 25–

---------------------5.7 W=

150 60–

---------------------4.1 W=

Product data sheet Rev. 01 — 25 February 2008 13 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

The characteristics curves (Figure 12a and Figure 12b, Figure 13,Figure 14, and

Figure 15a and Figure 15b) show the room temperature performance for SA58637 using

the demo PCB shown in Figure 16. For example, Figure 12 “Power dissipation as a

function of output power” (a and b) show the performance as a function of load resistance

and supply voltage. Worst case power dissipation is shown in Figure 13.Figure 15a

shows that the part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ωload

at 9 V supply, while Figure 15b shows that the part delivers 3.3 W per channel at 12 V

supply and 16 Ω load, THD+N = 10 %.

(1) 64.5 mm2 (10 in2) heat spreader top and bottom, 28.3 g (1 oz copper).

(2) 32.3 mm2 (5 in2) heat spreader top or bottom, 28.3 g (1 oz copper).

(3) No heat spreader.

Fig 11. Power dissipation as a function of ambient temperature

(W)

Tamb (°C)

0 16012040 80

002aac283

(1)

(3)

(2)

(1) VCC =6V.

(2) VCC = 7.5 V.

(3) VCC =9V.

(1) VCC =6V.

(2) VCC = 7.5 V.

(3) VCC =9V.

(4) VCC =12V.

a. RL=8Ω; f = 1 kHz; Gv=20dB b. R

L=16Ω; f = 1 kHz; Gv=20dB

Fig 12. Power dissipation as a function of output power

Po (W)

0321

002aac288

(W)

(1)

(2)

(3)

(W)

Po (W)

04312

002aac289

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 25 February 2008 14 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

THD+N = 10 %; f = 1 kHz; Gv=20dB.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

Fig 13. Worst case power dissipation as a function of

supply voltage Fig 14. Output power as a function of supply voltage

001aah747

VCC (V)

01284

(W)

(1) (2) (3)

002aac286

VCC (V)

01284

(W)

(1)

(2)

(3)

(1) VCC =6V.

(2) VCC = 7.5 V.

(3) VCC =9V.

(1) VCC =6V.

(2) VCC = 7.5 V.

(3) VCC =9V.

(4) VCC =12V.

a. RL=8Ω; f = 1 kHz; Gv=20dB b. R

L=16Ω; f = 1 kHz; Gv=20dB

Fig 15. Total harmonic distortion-plus-noise as a function of output power

002aac284

Po (W)

10−2101

10−2

102

THD+N

(%)

10−3

(1) (2) (3)

002aac285

Po (W)

10−310110−2

10−2

102

THD+N

(%)

10−3

(1) (2) (3) (4)

Product data sheet Rev. 01 — 25 February 2008 15 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

14.4 General remarks

The frequency characteristics can be adapted by connecting a small capacitor across the

feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a

small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this

creates a low-pass ﬁlter.

14.5 SA58637BS PCB demo

The application demo board may be used for evaluation single-ended input, BTL

differential output conﬁguration as shown in the schematic in Figure 3. The demo PCB

(Figure 16) is laid out for a 64.5 mm2 (10 in2) heat spreader (total of top and bottom heat

spreader area).

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Product data sheet Rev. 01 — 25 February 2008 16 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

Fig 16. SA58637BS PCB demo

001aah667

SA58637BS Rev5

Audio Amplifier

OUTL+

OUTR+

GND VCC

GND

top layer bottom layer

GND

VCC

OUTL−

INL−

INR−

OUTR−

MODE

GND

SEL

VCC

SELECT

10 kΩ10 kΩ

56 kΩ

11 kΩ

1 µF

47 µF

1 µF

100 µF

VCC/2

Product data sheet Rev. 01 — 25 February 2008 17 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

15. Package outline

Fig 17. Package outline SOT910-1 (HVQFN20)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT910-1

05-10-11MO-220- - - - - -

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included

UNIT A

max

mm 1 0.05

0.00 0.4

0.3 5.1

4.9 3.15

2.85 6.1

5.9 4.15

3.85 0.65

0.40

DIMENSIONS (mm are the original dimensions)

HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;

20 terminals; body 6 x 5 x 0.85 mm

terminal 1

index area

b c

0.2

D DhE Ehe

0.8

e1e2L v

0.1

0.05

0.052.4 4

0.1

02.5 5 mm

scale

1/2 e

AC B

vMCw M

20 17

710

1/2 e

B A

detail X

terminal 1

index area

Product data sheet Rev. 01 — 25 February 2008 18 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

16. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note

AN10365 “Surface mount reﬂow

soldering description”

16.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for ﬁne pitch SMDs. Reﬂow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

16.2 Wave and reﬂow soldering

Wave soldering is a joining technology in which the joints are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reﬂow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature proﬁle. Leaded packages,

packages with solder balls, and leadless packages are all reﬂow solderable.

Key characteristics in both wave and reﬂow soldering are:

•Board speciﬁcations, including the board ﬁnish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

16.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and ﬂux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath speciﬁcations, including temperature and impurities

Product data sheet Rev. 01 — 25 February 2008 19 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

16.4 Reﬂow soldering

Key characteristics in reﬂow soldering are:

•Lead-free versus SnPb soldering; note that a lead-free reﬂow process usually leads to

higher minimum peak temperatures (see Figure 18) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reﬂow temperature proﬁle; this proﬁle includes preheat, reﬂow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enough for the solder to make reliable solder joints (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classiﬁed in accordance with

Table 9 and 10

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reﬂow

soldering, see Figure 18.

Table 9. SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reﬂow temperature (°C)

Volume (mm3)

< 350 ≥ 350

< 2.5 235 220

≥ 2.5 220 220

Table 10. Lead-free process (from J-STD-020C)

Package thickness (mm) Package reﬂow temperature (°C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 01 — 25 February 2008 20 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

For further information on temperature proﬁles, refer to Application Note

AN10365

“Surface mount reﬂow soldering description”

17. Abbreviations

18. Revision history

MSL: Moisture Sensitivity Level

Fig 18. Temperature proﬁles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 11. Abbreviations

Acronym Description

BTL Bridge-Tied Load

CMOS Complementary Metal Oxide Semiconductor

DAP Die Attach Paddle

ESD ElectroStatic Discharge

HF High-Frequency

NPN Negative-Positive-Negative

PCB Printed-Circuit Board

PNP Positive-Negative-Positive

RMS Root Mean Squared

SE Single-Ended

THD Total Harmonic Distortion

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

SA58637_1 20080225 Product data sheet - -

Product data sheet Rev. 01 — 25 February 2008 21 of 22

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

19. Legal information

19.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

19.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

19.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not

designed, authorized or warranted to be suitable for use in medical, military,

aircraft, space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of

the product data given in the Limiting values and Characteristics sections of

this document, and as such is not complete, exhaustive or legally binding.

19.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

20. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors SA58637

2× 2.2 W BTL audio ampliﬁer

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 25 February 2008

Document identifier: SA58637_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

21. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Functional description . . . . . . . . . . . . . . . . . . . 5

8.1 Power ampliﬁer. . . . . . . . . . . . . . . . . . . . . . . . . 5

8.2 Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5

8.3 SELECT output conﬁguration. . . . . . . . . . . . . . 5

9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6

11 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

12 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

13 Application information. . . . . . . . . . . . . . . . . . . 8

13.1 BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

14.1 Static characterization . . . . . . . . . . . . . . . . . . . 9

14.2 BTL dynamic characterization . . . . . . . . . . . . 11

14.3 Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 12

14.4 General remarks. . . . . . . . . . . . . . . . . . . . . . . 15

14.5 SA58637BS PCB demo . . . . . . . . . . . . . . . . . 15

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17

16 Soldering of SMD packages . . . . . . . . . . . . . . 18

16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 18

16.2 Wave and reﬂow soldering . . . . . . . . . . . . . . . 18

16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 18

16.4 Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 19

17 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 20

18 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20

19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 21

19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21

19.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

19.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

19.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

20 Contact information. . . . . . . . . . . . . . . . . . . . . 21

21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22