FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT 5pA
FAST SWITCHING 4ns
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 150°C
Junction Operating Temperature -55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J) 360mW
Continuous Power Dissipation (SST) 350mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain -35V
Gate to Source -35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111 J/SST112 J/SST113
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
BVGSS Gate to Source Breakdown Voltage -35 -35 -35 IG = -1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage -3 -10 -1 -5 -3 VDS = 5V, ID = 1µA
VGS(F) Gate to Source Forward Voltage 0.7
V
IG = 1mA, VDS = 0V
IDSS Drain to Source Saturation Current2 20 5 2 mA VDS = 15V, VGS = 0V
IGSS Gate Leakage Current -0.005 -1 -1 -1 nA VGS = -15V, VDS = 0V
IG Gate Operating Current -5 pA VDG = 15V, ID = 10mA
ID(off) Drain Cutoff Current 0.005 1 1 1 nA VDS = 5V, VGS = -10V
rDS(on) Drain to Source On Resistance 30 50 100 Ω I
G = 1mA, VDS = 0V
J SERIES
TO-92
BOTTOM VIEW
123
DSG
TO 92
SST SERIES
1
2
3
SOT-23
TOP VIEW
DG
S
Linear Integrated System
s
J/SST111 SERIES
SINGLE N-CHANNEL JFET
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111 J/SST112 J/SST113
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
gfs Forward Transconductance 6 mS
gos Output Conductance 25 µS
VDS = 20V, ID = 1mA
f = 1kHz
rds(on) Drain to Source On Resistance 30 50 100 Ω VGS = 0V, ID = 0mA
f = 1kHz
Ciss Input Capacitance 7 12 12 12
Crss Reverse Transfer Capacitance 3 5 5 5
pF VDS = 0V, VGS = -10V
f = 1MHz
en Equivalent Noise Voltage 3
nV/√Hz VDG = 10V, ID = 1mA
f = 1 kHz
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SWITCHING CIRCUIT CHARACTERISTICS
SYM. J/SST111 J/SST112 J/SST113
VGS(L) -12V -7V -5V
RL 800Ω 1600Ω 3200Ω
ID(on) 12mA 6mA 3mA
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT CONDITIONS
td(on) 2
tr Turn On Time 2
td(off) 6
tf Turn Off Time 15
ns VDD = 10V
VGS(H) = 0V
51
Ω
R
L
1k
Ω
51
Ω
V
DD
V
GS(H)
V
GS(L)
OUT
123
LS XXX
YYWW
0.170
0.195
0.500
0.610
0.016
0.022
0.095
0.105 0.045
0.055
0.175
0.195 0.130
0.155
0.045
0.060
0.014
0.020
TO-92
DIMENSIONS
IN INCHES.
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
SWITCHING TEST CIRCUIT
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
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otherwise under any patent or patent rights of Linear Integrated Systems.
n or
