TSC966
NPN Silicon Planar High Voltage Transistor
Document Number: DS_P0000232 1 Version: E15
PRODUCT SUMMARY
BV
600V
BV
400V
I
300mA
V
0.5V @ IC / IB = 50mA / 5mA
Features
●High BVceo, BVcbo
●High current gain
Ordering Information
Part No. Package Packing
TSC966CT B0G TO-92 1,000pcs / Bulk
TSC966CT A3G TO-92 2,000pcs / Ammo
TSC966CW RPG SOT-223 2,500pcs / 13” Reel
Note: “G” denote for Halogen Free Product
Structure
●Epitaxial Planar Type
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
600 V
Collector-Emitter Voltage V
600 V
Collector-Emitter Voltage V
400 V
Emitter-Base Voltage V
7 V
Collector Current DC IC 0.3 A
Pulse 1
Total Power Dissipation @ TA=25oC TO-92 Ptot 0.9 W
SOT-223 1
Operating Junction Temperature T
+150
C
Operating Junction and Storage Temperature Range T
- 55 to +150
C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter Conditions Symbol Min Typ Max
Unit
Collector-Base Breakdown Voltage I
= 50uA BV
600 -- -- V
Collector-Emitter Saturation Voltage I
= 100uA, V
= 0 BV
600 -- -- V
Collector-Emitter Breakdown Voltage
I
= 1mA BV
400 -- -- V
Emitter-Base Breakdown Voltage I
= 50uA BV
7 -- -- V
Collector-Base Cutoff Current V
= 600V I
-- -- 0.5 uA
Collector-Emitter Cutoff Current V
= 400V I
-- -- 1 uA
Emitter-Base Cutoff Current V
= 7V I
-- -- 1.5 uA
Collector-Emitter Saturation Voltage I
= 50mA, I
= 5mA V
-- -- 0.5 V
Base-Emitter Saturation Voltage I
= 50mA, I
= 5mA V
-- -- 1 V
DC Current Transfer Ratio V
= 5V, I
= 1mA h
1 100 -- --
V
= 5V, I
= 20mA h
2 90 -- 300
Transition Frequency V
= 10V, I
= 20mA f
50 -- -- MHz
Output Capacitance V
= 20V, f=1MHz Cob -- -- 7 pF
1. Emitter
2. Collector
3. Base
1. Base
2. Collector
3. Emitter
TSC966CT B0G, A3G
Not Recommended