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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW 200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 71A
IDM TC= 25 °C, pulse width limited by TJM 320 A
IAR TC= 25 °C 80A
EAR TC= 25°C 45 mJ
EAS 1.5 J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 310 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 5g
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 uA 2 0 0 V
VGS(th) VDS = VGS, ID = 4 mA 2 . 0 4 . 0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = IT28 mW
Note 1
HiPerFETTM Power MOSFETs
ISOPLUS247TM, Q-Class
(Electrically Isolated Back Surface)
98617A (7/00)
GD
G = Gate D = Drain
S = Source TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXFR 80N20Q VDSS = 200 V
ID25 = 71 A
RDS(on) = 28mW
trr £ 200 ns
ISOPLUS 247TM
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ITNote 1 35 45 S
Ciss 4600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF
Crss 500 pF
td(on) 26 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = IT50 ns
td(off) RG = 2 W (External), 75 ns
tf20 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT39 nC
Qgd 100 nC
RthJC 0.40 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 80 A
ISM Repetitive; 320 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 200 ns
QRM 1.2 mC
IRM 10 A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %; IT = 80A
IXFR 80N20Q
ISOPLUS 247 (IXFR) OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
