TIP132G - ON Semiconductor

September, 2011 − Rev. 3

1Publication Order Number:

TIP131/D

TIP131, TIP132 (NPN),

TIP137 (PNP)

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 80 Vdc (Min) − TIP131

= 100 Vdc (Min) − TIP132, TIP137

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc

= 3.0 Vdc (Max) @ IC = 6.0 Adc

•Monolithic Construction with Built−In Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol TIP131

TIP132

TIP137 Unit

Collector−Emitter Voltage VCEO 80 100 Vdc

Collector−Base Voltage VCB 80 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

Peak

IC8.0

Adc

Base Current IB300 mAdc

Total Power Dissipation @ TC = 25°C PD70 W

Total Power Dissipation @ TA = 25°C PD2.0 W

Operating and Storage Junction,

Temperature Range

TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

RqJC 1.78 °C/W

Thermal Resistance,

Junction−to−Ambient

RqJA 63.5 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

TIP131 TO−220

TO−220AB

CASE 221A

STYLE 1

50 Units/Rail

MARKING

DIAGRAM

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 70 WATTS

http://onsemi.com

123

TIP132 TO−220 50 Units/Rail

TIP137 TO−220 50 Units/Rail

TIP131G TO−220

(Pb−Free)

50 Units/Rail

TIP132G TO−220

(Pb−Free)

50 Units/Rail

TIP137G TO−220

(Pb−Free)

50 Units/Rail

TIP13x = Device Code

x = 1, 2, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP13xG

AYWW

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP131, TIP132 (NPN), TIP137 (PNP)

http://onsemi.com

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

PNP

TIP137

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

NPN

TIP131

TIP132

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0) TIP131

TIP132, TIP137

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) TIP131

(VCE = 50 Vdc, IB = 0) TIP132, TIP137

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) TIP131

(VCB = 100 Vdc, IE = 0) TIP132, TIP137

ICBO

−

0.2

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO −5.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

hFE

500

1000

−

15000

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 16 mAdc)

(IC = 6.0 Adc, IB = 30 mAdc)

VCE(sat)

−

2.0

3.0

Vdc

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on) −2.5 Vdc

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TIP131, TIP132 (NPN), TIP137 (PNP)

http://onsemi.com

00 20 40 60 80 100 120 160

Figure 2. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

4.0

2.0

1.0

3.0

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 1.78°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

TIP131, TIP132 (NPN), TIP137 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

TIP131/D

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