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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54SDW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @TA=25℃
Parameter Symbol Limits Unit
Peak Repetitive reverse voltage
DC Blocking Voltage VRM
VR 30 V
Aver age Rectified Ou tput Current IO 100
mA
Power Dissipation PD 150 mW
Junction temperature TJ 125 ℃
Storage temperature rang e TSTG -65-125 ℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100μA 30 V
Reverse voltage leakage current IR V
R=25V 2
uA
Forward voltage VF
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
240
320
400
500
1000
mV
Total capacitance CT V
R=1V,f=1MHz 10
pF
Reverse recovery time t r r IF=10mA, IR=10mA~1mA
RL=100Ω 5
nS
WBFBP-06C
(2×2×0.5)
unit: mm
FBAT54SDW
Marking:KL8
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 017 REF.
0. 500 R EF. 0. 020 R EF.
Symbol Dimensions In Millimeters Dimensions In Inches
0. 650 TYP. 0. 026 TYP.
0. 420 R EF. 0. 017 R EF.
0. 420 R EF.
0. 600 R EF. 0. 024 R EF.
0. 300 R EF. 0. 012 R EF.
APPLICATION CIRCUITS
Bridge rectifiers
