MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range -5 V -600 mA 350 mW -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -10A, IE = 0 -60 V BVCEO Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 -60 V BVEBO Emitter-Base Breakdown Voltage IE = -10A, IC = 0 -5 ICBO Collector Cut-off Current VCB = -50V, IE = 0 hFE DC Current Gain VCE = -10V, IC = -0.1mA VCE = -10V, IC = -1.0mA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA * VCE = -10V, IC = -500mA * V -0.01 75 100 100 100 50 A 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -0.4 -1.6 V V VBE (sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -1.3 -2.6 V V fT Current Gain Bandwidth Product IC = -50mA, VCE = -20V, f = 100MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8 pF tON Turn On Time VCC = -30V, IC = -150mA IB1 = -15mA 50 ns tOFF Turn Off Time VCC = -6V, IC = -150mA IB1 = IB2 = -15mA 110 ns 200 MHz * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation MMBT2907AK Rev. B 1 www.fairchildsemi.com Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 0.7 Vce=5V B=10 0.6 300 125C 250 75C 200 Vce(sat), Saturation Current,[V] hfe, Current Gain 350 25C 150 100 50 0.5 0.4 0.3 125C 0.2 75C 0.1 25C 0.1 1 10 1 100 10 Collector Current, [mA] Collector Current, [mA] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current 1.0 Leakage current of Collector - Base(nA) 100 B=10 Vbe(sat), Saturation Current,[V] 0.9 0.8 0.7 0.6 25C 0.5 75C 0.4 0.3 0.1 125C 1 10 V CB = 35V 10 1 0.1 100 25 50 Collector Current, [mA] 75 100 125 150 Temperature, ['C] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 12 0.4 IE = 0 f = 1M H z PD - Power Dissipation (W) 10 Cob [pF], Capacitance 100 8 6 4 0.3 0.2 0.1 2 0.0 0 -1 -10 -100 0 50 75 100 125 150 Temperature, [ C] 2 MMBT2907AK Rev. B 25 O V C B [V ], C ollector-B ase V oltage www.fairchildsemi.com MMBT2907AK PNP Epitaxial Silicon Transistor Typical Performance Characteristics MMBT2907AK PNP Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 3 MMBT2907AK Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 4 MMBT2907AK Rev. B www.fairchildsemi.com MMBT2907AK PNP Epitaxial Silicon Transistor TRADEMARKS