1N5221B~1N5281B
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristi c
3. Low reverse current level
4. VZ-tolerance±5%
Applications
Voltage st abil ization
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V500 mW
Z-current IZPV/VZmA
Junction temperature Tj200 ℃
Storage temperature range Tstg -65~+200 ℃
Maximum Thermal Resistance
Tj=25℃ Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) T L=constant RthJA 300 K/W
Stresses exceeding maximum rati ngs may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.1 V
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1N5221B~1N5281B
VZnom1) IZT for r
zjT rzjK at I
ZK IR at VRTKVZ
Type V mA Ω Ω mA μA V %/K
1N5221B 2.4 20 <30 <1200 0.25 <100 1.0 <-0.085
1N5222B 2.5 20 <30 <1250 0.25 <100 1.0 <-0.085
1N5223B 2.7 20 <30 <1300 0.25 <75 1.0 <-0.080
1N5224B 2.8 20 <30 <1400 0.25 <75 1.0 <-0.080
1N5225B 3.0 20 <29 <1600 0.25 <50 1.0 <-0.075
1N5226B 3.3 20 <28 <1600 0.25 <25 1.0 <-0.070
1N5227B 3.6 20 <24 <1700 0.25 <15 1.0 <-0.065
1N5228B 3.9 20 <23 <1900 0.25 <10 1.0 <-0.060
1N5229B 4.3 20 <22 <2000 0.25 <5 1.0 <+0.055
1N5230B 4.7 20 <19 <1900 0.25 <5 2.0 <+0.030
1N5231B 5.1 20 <17 <1600 0.25 <5 2.0 <+0.030
1N5232B 5.6 20 <11 <1600 0.25 <5 3.0 <+0.038
1N5233B 6.0 20 <7 <1600 0.25 <5 3.5 <+0.038
1N5234B 6.2 20 <7 <1000 0.25 <5 4.0 <+0.045
1N5235B 6.8 20 <5 <750 0.25 <3 5.0 <+0.050
1N5236B 7.5 20 <6 <500 0.25 <3 6.0 <+0.058
1N5237B 8.2 20 <8 <500 0.25 <3 6.5 <+0.062
1N5238B 8.7 20 <8 <600 0.25 <3 6.5 <+0.065
1N5239B 9.1 20 <10 <600 0.25 <3 7.0 <+0.068
1N5240B 10 20 <17 <600 0.25 <3 8.0 <+0.075
1N5241B 11 20 <22 <600 0.25 <2 8.4 <+0.076
1N5242B 12 20 <30 <600 0.25 <1 9.1 <+0.077
1N5243B 13 9.5 <13 <600 0.25 <0.5 9.9 <+0.079
1N5244B 14 9.0 <15 <600 0.25 <0.1 10 <+0.082
1N5245B 15 8.5 <16 <600 0.25 <0.1 11 <+0.082
1N5246B 16 7.8 <17 <600 0.25 <0.1 12 <+0.083
1N5247B 17 7.4 <19 <600 0.25 <0.1 13 <+0.084
1N5248B 18 7.0 <21 <600 0.25 <0.1 14 <+0.085
1N5249B 19 6.6 <23 <600 0.25 <0.1 15 <+0.086
1N5250B 20 6.2 <25 <600 0.25 <0.1 16 <+0.086
1N5251B 22 5.6 <29 <600 0.25 <0.1 17 <+0.087
1N5252B 24 5.2 <33 <600 0.25 <0.1 18 <+0.088
1N5253B 25 5.0 <35 <600 0.25 <0.1 19 <+0.089
1N5254B 27 4.6 <41 <600 0.25 <0.1 21 <+0.090
1N5255B 28 4.5 <44 <600 0.25 <0.1 21 <+0.091
1N5256B 30 4.2 <49 <600 0.25 <0.1 23 <+0.091
1N5257B 33 3.8 <58 <700 0.25 <0.1 25 <+0.092
1N5258B 36 3.4 <70 <700 0.25 <0.1 27 <+0.093
1N5259B 39 3.2 <80 <800 0.25 <0.1 30 <+0.094
1N5260B 43 3.0 <93 <900 0.25 <0.1 33 <+0.095
1N5261B 47 2.7 <105 <1000 0.25 <0.1 36 <+0.095
1N5262B 51 2.5 <125 <1100 0.25 <0.1 39 <+0.096
1N5263B 56 2.2 <150 <1300 0.25 <0.1 43 <+0.096
1N5264B 60 2.1 <170 <1400 0.25 <0.1 46 <+0.097
1N5265B 62 2.0 <185 <1400 0.25 <0.1 47 <+0.097
1N5266B 68 1.8 <230 <1600 0.25 <0.1 52 <+0.097
1N5267B 75 1.7 <270 <1700 0.25 <0.1 58 <+0.098
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1N5221B~1N5281B
VZnom1) IZT for r
zjT rzjK at I
ZK IR at VRTKVZ
Type V mA Ω Ω mA μA V %/K
1N5268B 82 1.5 <330 <2000 0.25 <0.1 62 <+0.098
1N5269B 87 1.4 <370 <2200 0.25 <0.1 68 <+0.099
1N5270B 91 1.4 <400 <2300 0.25 <0.1 69 <+0.099
1N5271B 100 1.3 <500 <2600 0.25 <0.1 76 <+0.11
1N5272B 110 1.1 <750 <3000 0.25 <0.1 84 <+0.11
1N5273B 120 1 <900 <3000 0.25 <0.1 91 <+0.11
1N5274B 130 0.95 <1100 <4000 0.25 <0.1 99 <+0.11
1N5275B 140 0.9 <1300 <4500 0.25 <0.1 106 <+0.11
1N5276B 150 0.85 <1500 <4500 0.25 <0.1 114 <+0.11
1N5277B 160 0.8 <1700 <5000 0.25 <0.1 122 <+0.11
1N5278B 170 0.74 <1900 <5500 0.25 <0.1 129 <+0.11
1N5279B 180 0.68 <2200 <6000 0.25 <0.1 137 <+0.11
1N5280B 190 0.66 <2400 <6500 0.25 <0.1 144 <+0.11
1N5281B 200 0.65 <2500 <7000 0.25 <0.1 152 <+0.11
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL) at 30℃,
9.5mm (3/8”) from the diode body.
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1N5221B~1N5281B
Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 2. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
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1N5221B~1N5281B
Figure 3. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
Figure 4. Thermal resistance from junction to ambient as a function of pulse duration
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1N5221B~1N5281B
Dimensions in mm
Type No.
Cathode identification
Φ2.0 max.
Φ0.55 max.
4.2 max. 26 min. 26 min.
Cathode Anode
1
5
N
2
Standard Glass Case
JEDEC DO-35
Marking
N
2
5
0
5
1
B
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