2N6298 2N6299
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6300 2N6301 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 16 A
Continuous Base Current IB 120 mA
Power Dissipation PD 75 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 2.33 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEO, VBE=1.5V 0.5 mA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=150°C 5.0 mA
ICEO V
CE=½Rated VCEO 0.5 mA
IEBO V
EB=5.0V 2.0 mA
BVCEO IC=100mA (2N6298, 2N6300) 60 V
BVCEO IC=100mA (2N6299, 2N6301) 80 V
VCE(SAT) IC=4.0A, IB=16mA 2.0 V
VCE(SAT) IC=8.0A, IB=80mA 3.0 V
VBE(SAT) VCE=8.0V, IC=80mA 4.0 V
VBE(ON) VCE=3.0V, IC=4.0A 2.8 V
hFE VCE=3.0V, IC=4.0A 750 18K
hFE VCE=3.0V, IC=8.0A 100
hfe VCE=3.0V, IC=3.0A, f=1.0kHz 300
fT VCE=3.0V, IC=3.0A, f=1.0MHz 4.0 MHz
Cob VCB=10V, IE=0, f=100kHz (NPN Types) 200 pF
Cob VCB=10V, IE=0, f=100kHz (PNP Types) 300 pF
2N6298 2N6299 PNP
2N6300 2N6301 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6298 series
types are complementary silicon darlington power
transistors manufactured by the epitaxial base process
designed for high gain amplifier and medium speed
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (21-June 2012)
www.centralsemi.com
2N6298 2N6299 PNP
2N6300 2N6301 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (21-June 2012)
