ky SGS-THOMSON MICROELECTRONICS BUX10P MEDIUM POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH GURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATIONS a LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT a HIGH FREQUENCY AND EFFICENCY CONVERTERS DESCRIPTION The BUX10P is a silicon multiepitaxial planar NPN transistor in Jedec TO-218 case, intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM C (TAB) (1) B FO (2) SCOBB20 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vcospo |Collector-base Voltage (le = 0) 160 Vv Vcex Gollector-emitter Voltage (Vee = - 1.5V) 160 Vv VcEo Gollector-emitter Voltage (lp = 0) 125 Vv VEBO Emitter-base Voltage (Ic = 0) 7 Vv Ic Collector Current 25 A lem Collector Peak Current (tp = 10 ms) 30 A lp Base Current 5 A Prot Total Power Dissipation at Tease < 25 C 106 Ww Tstg Storage Temperature -65 to 150 C Tj Max Operating Junction Temperature 150 C March 1997 1/4BUX10P THERMAL DATA Rihj-case | Thermal Resistance Junction-case Max | 1.17 Ciw | ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. | Max. Unit IcEo Collector Cut-off Vce = 100 V 1.5 mA Current (Ip = 0) lcex Collector Cut-off Vce = 160 V Vee = -1.5V 1.5 mA Current Tease = 125C Vce= 160 V Vee = -1.5V 6 mA lEBo Emitter Cut-off Current |Veg =5 V 1 mA {lc = 0) Vceorsus) | Collector-Emitter Ic = 200 mA 125 Vv Sustaining Voltage VEBO Emitter-Base Voltage le = 50 mA 7 Vv {lc = ) VceEisat) | Collector-Emitter Ic=10A IpBel1A 0.3 0.6 Vv Saturation Voltage lc =20A Ip=2A 0.7 1.2 Vv Vee(sat) |Base-Emitter Ic=20A IBpe2A 1.6 2 Vv Saturation Voltage hre DC Current Gain Ic =10A Voce =2V 20 60 Ic =20A VceE =4 V 10 Isfo Second Breakdown VceE = 30 V t=1s 3.53 A Collector Current Vce = 48 V t=18s 1 A fr Transistor Frequency lc=1A Vce =15 8 MHz f = 10 MHz ton Turn-on Time lc = 20A lp, =2A 0.5 1.5 ps Veco = 30V ts Storage Time Ic=20A lpi = - Ip2 = 2A 0.6 1.2 ls tt Fall Time Voc = 30V 0.15 0.3 hs Clamped Es/p Velamp=125 V 20 A Collector Current L = 500 wH Sate Operating Area G- 5638 lg 5 tai 4 [Ig MAX PULSED 10 1 a 19! t 4 toe 2 e 6 & ? 5 8 1 10 0 Yee Y) 2/4 ir SGS-THOMSON Y/ WsichosLectRomicsBUX10P TO-218 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 47 49 0.185 0.193 Cc 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 Le - 16.2 - 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220 - 12.2 - 0.480 o 4 41 0.157 0.161 \ | ky SGS-THOMSON MICROELECTRONICS 3/4BUX10P 4/4 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specitications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMS ON Microelectronics products are notauthorized tor use as critical components inlife support devices or systems without express written approvalof SGS-THOMSON Micreelectonics. 1997 SGS-THOMSCN Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSCN Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy- Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AYP esouscreones