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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features * Glass-Passivated Junction * 600 W Peak Pulse Power Capability on 10/1000 s Waveform. * Excellent Clamping Capability * Low-Incremental Surge Resistance * Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and 5.0 ns for Bidirectional * Typical IR Less than 1.0 A Above 10 V * UL Certificate #E258596 SMB/DO-214AA Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in both directions suitable for bi-directional applications. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit 600 W See Table A 100 A PPPM Peak Pulse Power Dissipation on 10/1000 s Waveform IPPM Peak Pulse Current on 10/1000 s Waveform IFSM Non-Repetitive Peak Forward Surge Current Superimposed on Rated Load (JEDEC Method)(1) TSTG Storage Temperature Range -55 to 150 C Operating Junction Temperature Range -55 to 150 C TJ Note: 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. (c) 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com SMBJ5V0(C)A - SMBJ170(C)A -- 600 Watt Transient Voltage Suppressors November 2014 Values are at TA = 25C unless otherwise noted. Breakdown Voltage VBR (V) Min. Max. Part Marking(2) Reverse Stand-Off Voltage VRWM (V) SMBJ5V0(C)A KE 5.0 6.40 7.00 10 9.2 65.2 800 SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800 Uni-Directional Bi-Directional (C) Device Test Current IT (mA) Clamping Voltage at IPPM VC (V) Peak Pulse Current IPPM (A) Reverse Leakage at VRWM IR (A)(3) SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7V0(C)A KM 7.0 7.78 8.60 10 12.0 50.0 200 SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100 SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50 SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20 SMBJ9V0(C)A KV 9.0 10.0 11.1 1 15.4 39.0 10 SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5 SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33.0 5 SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5 SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5 SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5 SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5 SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5 SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5 SMBJ18(C)A LT 18 20.0 22.1 1 29.2 20.5 5 SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5 SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5 SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5 SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5 SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5 SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5 SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5 SMBJ36(C)A MP 36 40.0 44.2 1 58.1 10.3 5 SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5 SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5 SMBJ45(C)A MV 45 50.0 55.3 1 72.7 8.3 5 SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5 SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5 SMBJ54(C)A NE 54 60.0 66.3 1 87.1 6.9 5 SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5 SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5 SMBJ64(C)A NM 64 71.1 78.6 1 103.0 5.8 5 SMBJ70(C)A NP 70 77.8 86.0 1 113.0 5.3 5 SMBJ75(C)A NR 75 83.3 92.1 1 121.0 5.0 5 SMBJ78(C)A NT 78 86.7 95.8 1 126.0 4.8 5 Notes: 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. (c) 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 2 SMBJ5V0(C)A - SMBJ170(C)A -- 600 Watt Transient Voltage Suppressors Electrical Characteristics Values are at TA = 25C unless otherwise noted. Breakdown Voltage VBR (V) Uni-Directional Bi-Directional (C) Device Part Marking(2) Reverse Stand-Off Voltage VRWM (V) Min. Max. SMBJ85(C)A NV 85 94.4 104.0 SMBJ90(C)A NX 90 100.0 111.0 1 146.0 4.1 5 SMBJ100(C)A NZ 100 111.0 123.0 1 162.0 3.7 5 5 Test Current IT (mA) Clamping Voltage at IPPM VC (V) Peak Pulse Current IPPM (A) Reverse Leakage at VRWM IR (A)(3) 1 137.0 4.4 5 SMBJ110(C)A PE 110 122.0 135.0 1 177.0 3.4 SMBJ120(C)A PG 120 133.0 147.0 1 193.0 3.1 5 SMBJ130(C)A PK 130 144.0 159.0 1 209.0 2.9 5 SMBJ150(C)A PM 150 167.0 185.0 1 243.0 2.5 5 SMBJ160(C)A PP 160 178.0 197.0 1 259.0 2.3 5 SMBJ170(C)A PR 170 189.0 209.0 1 275.0 2.2 5 Notes: 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. (c) 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 3 SMBJ5V0(C)A - SMBJ170(C)A -- 600 Watt Transient Voltage Suppressors Electrical Characteristics (Continued) 100 TA = 25 C PULSE POWER (%) PULSE POWER (kW) 100 10 1 0.1 0.0001 75 50 25 0 0.001 0.01 0.1 PULSE WIDTH (ms) 1 10 0 Half Value-Ipp 2 10/1000 sec Waveform as Defined by R.E.A. 50 Measured at Zero Bias 1000 500 Measured at Stand-Off Voltage (V RWM) 200 100 50 e-kt 20 td 0 0 1 2 TIME (ms) 3 10 4 Figure 3. Pulse Waveform 200 FORWARD SURGE CURRENT (A) 200 TA = 25 C f = 1.0 MHz Visg = 50m Vp-p 2000 CAPACITANCE (pF) PEAK PULSE CURRENT (%) Peak Value Ippm 100 6000 4000 TA = 25 C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of Ipp sec tf = 10 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Figure 2. Pulse Derating Curve Figure 1. Peak Pulse Power Rating Curve 150 25 1 5 10 50 REVERSE VOLTAGE (V) 100 200 Figure 4. Junction Capacitance T A = T Amax 8.3ms Single Half Sine-Wave JEDEC Method 100 50 20 10 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 Figure 5. Non-Repetitive Surge Current (c) 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 4 SMBJ5V0(C)A - SMBJ170(C)A -- 600 Watt Transient Voltage Suppressors Typical Performance Characteristics 7+,6'5$:,1*,67+(3523(57<2))$,5&+,/'6(0,&21'8&725&25325$7,211286( 7+(5(2)6+$//%(0$'(27+(57+$1$6$5()(5(1&()25352326$/6$668%0,77(' 72)$,5&+,/'6(0,&21'8&725&25325$7,21)25-2%672%((;(&87(',1&21)250,7< 5(9,6,216 :,7+68&+352326$/681/(667+(&216(172)6$,')$,5&+,/'6(0,&21'8&725&25 &23,('25'83/,&$7('25,76&217(176',6&/26('7+(,1)250$7,21&217$,1(' 217+,6'5$:,1*,6&21),'(17,$/$1'35235,(7$5< % '(6&5,37,21 1%5 325$7,21+$635(9,286/<%((12%7$,1('123$572)7+,6'5$:,1*6+$//%( % 0 '$7( 5(/($6('72'&& 0$< %<$33 ' 6'/(()66= & % $ $ % % /$1'3$77(515(&200(1'$7,21 0$; $ 5; *$8*( 3/$1( % & 0 '(7$,/$ 6&$/( & % $ 127(6 $(;&(37:+(5(127('&21)250672 -('(&'29$5,$7,21$$ % '2(6127&203/<-('(&67'9$/8( &$//',0(16,216$5(,10,//,0(7(56 '',0(16,216$5((;&/86,9(2)%8556 02/')/$6+$1'7,(%$53527586,216 (',0(16,21$1'72/(5$1&($63(5$60( < )/$1'3$77(5167'',20;0 *'5$:,1*),/(1$0('2$$5(9 $33529$/6 '5$:1 %2%2<0$/'2 &+(&.(' 6'/(( $33529(' )5('5(1 '$7( 0$< /'60%-('(& '29$5,$7,21$$ $33529(' +2:$5'$//(1 6&$/( 352-(&7,21 >00@ ,1&+ 6,=( '5$:,1*180%(5 1$ 0.7'2$$ )250(5/< 1$ 6+((7 5(9 2) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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