LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = RDS(on) N-Channel Enhancement Mode Avalanche Rated 1000V 30A 450m miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 S D V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 70 A IA EAS TC = 25C TC = 25C 30 2 A J PD TC = 25C 800 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. -55 ... +150 150 -55 ... +150 C C C Features 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1mA t = 1 Minute t = 1 Second Mounting Torque Terminal Connection Torque Weight G = Gate S = Source D = Drain * MiniBLOC with Aluminium Nitride Isolation * Designed for Linear Operation * International Standard Package * Avalanche Rated * Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) * Easy to Mount * Space Savings * High Power Density Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 20V, ID = 0.5 * IDSS, Note 1 V 5.5 V 200 nA TJ = 125C (c) 2012 IXYS CORPORATION, All Rights Reserved 50 A 1 mA 450 m Applications * * * * * * Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls DS99813B(11/12) IXTN30N100L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 * IDSS, Note 1 6 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS td(off) RG = 2 (External) tf Qg(on) Qgs VGS = 20V, VDS = 0.5 * VDSS, ID = 0.5 * IDSS Qgd 15 SOT-227B (IXTN) Outline S 13.7 nF 980 pF 115 pF 36 ns 70 ns 100 ns 78 ns 545 nC 86 nC 165 nC RthJC (M4 screws (4x) supplied) 0.156 C/W RthCS 0.05 C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 600V, ID = 0.5A, TC = 90C 300 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Note Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 1000 IF = IS, -di/dt = 100A/s VR = 100V, VGS = 0V ns 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTN30N100L Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 70 30 VGS = 20V 14V 12V 25 10V 50 20 ID - Amperes ID - Amperes VGS = 20V 14V 60 9V 15 12V 40 30 10V 8V 10 20 9V 5 7V 10 6V 0 0 1 2 3 4 5 6 7 8 0 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 30 3.0 VGS = 20V 12V 10V VGS = 20V 2.6 20 R DS(on) - Normalized 25 ID - Amperes 8V 7V 9V 15 8V 10 7V 5 2.2 I D = 30A 1.8 I D = 15A 1.4 1.0 0.6 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 2.6 VGS = 20V 2.4 TJ = 125C 30 25 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25C 20 15 10 1.2 5 1.0 0.8 0 0 10 20 30 40 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTN30N100L Fig. 7. Input Admittance Fig. 8. Transconductance 45 22 40 20 TJ = - 40C 18 35 25C 30 25 g f s - Siemens ID - Amperes 16 TJ = 125C 25C - 40C 20 15 125C 14 12 10 8 6 10 4 5 2 0 0 4 5 6 7 8 9 10 11 0 5 10 15 20 VGS - Volts 25 30 35 40 45 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 20 90 18 80 16 70 14 VDS = 500V I D = 15A VGS - Volts IS - Amperes I G = 10mA 60 50 40 TJ = 125C 30 12 10 8 6 TJ = 25C 20 4 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 50 100 VSD - Volts 150 200 250 300 350 400 450 500 550 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 10,000 Ciss Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTN30N100L Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 90C 100 100 RDS(on) Limit 25s RDS(on) Limit 25s 100s 100s 10 10 ID - Amperes ID - Amperes 1ms 10ms 1ms 10ms 1 1 DC TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 90C Single Pulse 0.1 DC 0.1 10 100 1000 VDS - Volts (c) 2012 IXYS CORPORATION, All Rights Reserved 10000 10 100 1000 10000 VDS - Volts IXYS REF: T_30N100L(9N)11-27-12-B