Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -22
ID @ VGS = -12V, T C = 100°C Continuous Drain Current -14
IDM Pulsed Drain Current ➀-88
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR A valanche Current ➀-22 A
EAR Repetitive Avalanche Energy ➀15 mJ
dv/dt Peak Diode Recovery dv/dt ➂-23 V/ns
TJOperating Junction -55 to 150
TSTG Storage T emperature Range
Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s)
Weight 9.3 (typical) g
PD - 90889D
Pre-Irradiation
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized f or both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
2/18/03
www.irf.com 1
TO-254AA
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHM9150 100K Rads (Si) 0.080Ω-22A JANSR2N7422
IRHM93150 300K Rads (Si) 0.080Ω-22A JANSF2N7422
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow T otal Gate Charge
nProton T olerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
For footnotes refer to the last page
IRHM9150
JANSR2N7422
RADIATION HARDENED 100V, P-CHANNEL
POWER MOSFET
REF: MIL-PRF-19500/662
THRU-HOLE (TO-254AA)
RAD Hard
™
HEXFET
®
TECHNOLOGY
IRHM9150 Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown V oltage -100 — — V VGS = 0V, ID =-1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.093 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.080 VGS = -12V, ID = -14A➃
Resistance — — 0.085 Ω VGS = -12V, ID = -22A➃
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 11 — — S ( ) V
DS >-15V, IDS = -14A ➃
IDSS Zero Gate Voltage Drain Current — — -2 5 VDS= -80V ,VGS=0V
— — -250 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 200 VGS =-12V, ID = -22A
Qgs Gate-to-Source Charge — — 35 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 48
td(on) Turn-On Delay Time — — 40 VDD = -50V, ID = -22A,
trRise Time — — 170 VGS =-12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 190
tfFall Time — — 190
LS + LDTotal Inductance — 6.8 —
Ciss Input Capacitance — 4300 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 1100 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 310 —
nA
Ω
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.83
RthJA Junction-to-Ambient — — 48 °C/W Typical socket mount
RthCS Case-to-Sink — 0.21 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -22
ISM Pulse Source Current (Body Diode) ➀— — -88
VSD Diode Forward V oltage — — -3.0 V Tj = 25°C, IS = -22A, VGS = 0V ➃
trr Reverse Recovery Time — — 300 nS Tj = 25°C, I F = -22A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 1.5 µC VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com 3
Pre-Irradiation IRHM9150
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -25 — -25 µA VDS=-80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.080 — 0.080 Ω VGS = -12V, ID =-14A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.080 — 0.080 Ω VGS = -12V, ID =-14A
On-State Resistance (TO-254)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHM9150 (JANSR2N7422)
2. Part number IRHM93150 (JANSF2N7422)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
T able 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
VSD Diode Forward Voltage ➃ — -3.0 — -3.0 V VGS = 0V, IS = -22A
-120
-100
-80
-60
-40
-20
00 5 10 15 20
VGS
VDS
Cu
Br
I
noI TEL ))²mc/gm(/VeM ygrenE )VeM( egnaR )mµ( )V(SDV
V0=SGV@V5=SGV@V01=SGV@V51=SGV@V02=SGV@
uC8258234001-001-001-07-06-
rB8.6350393001-001-07-05-04-
I9.955438.2306- ————
IRHM9150 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
5678910
V = -50V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-22A
-
-
www.irf.com 5
Pre-Irradiation IRHM9150
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
1000
2000
3000
4000
5000
6000
7000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-22A
V =-20V
DS
V =-50V
DS
V =-80V
DS
1
10
100
0.0 1.0 2.0 3.0 4.0
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRHM9150 Pre-Irradiation
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0
4
8
12
16
20
24
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VGS
www.irf.com 7
Pre-Irradiation IRHM9150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-12V
Fig 13b. Gate Charge Test Circuit
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-9.8A
-14A
-22A
VGS
IRHM9150 Pre-Irradiation
8www.irf.com
Foot Notes:
Case Outline and Dimensions — T O-254AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [. 014] B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
123
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
2
2.73 [.895]
2
1.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014] B A
3X
4.06 [.160]
3.56 [.140]
B
R 1.52 [.060]
123
4.82 [.190]
3.81 [.150]
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
➀Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁VDD = -25V, starting TJ = 25°C, L=2.1mH
Peak IL = -22A, VGS =-12V
➂ISD ≤ -22A, di/dt ≤ -450A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➃Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
NOT E S :
1. DIMENSIONING & TOL ERANCING PE R AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES ]. 1 = DRAIN
2 = SOURCE
3 = GATE
PIN AS S IGNME NT S
3. CONT ROLLING DIMENS ION: INCH.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.