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RF01002 Rev A, June 2010 High Reliability Product Group Page 4 of 4
tp – Pulse Time – sec Test wave form parameters T – Temperature – ºC
tr = 10 s, tp = 1000 s
FIGURE 1 Peak Pulse Power vs. Pulse Time FIGURE 2 Pulse Waveform FIGURE 3 Derating curve
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In
applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended
rectifier part number for the application in Figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration
desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for
both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional
configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4 FIGURE 5 FIGURE 6
TVS with internal low Optional Unidirectional Optional Bidirectional
capacitance rectifier diode configuration (TVS and configuration (two TVS
separate rectifier diode devices in anti-parallel)
in parallel)
PPP – Peak Pulse Power – kW
Peak Pulse Power (PPP) or Current (IPP)
in percent of 25oC rating