MBR750 - Fairchild Semiconductor

MBR735 - MBR760 — Schottky Rectifiers

MBR735 - MBR760 Rev. 1.1.0 1

June 2013

MBR735 - MBR760

Schottky Rectifiers

Features

• Low Power Loss, High Efficiency

• High Surge Capacity

• Metal Silicon Junction, Majority Carrier Conduction

• High Current Capacity, Low Forward-Voltage Drop

• Guard Ring for Over-V oltage Protection (OVP)

Applications

• Low-Voltage, High-Frequency Inverters

•Free Wheeling and Polarity Pro tection

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresse s ab ove the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter Value Units

735 745 750 760

VRRM Maximum Repetitive Reverse V oltage 35 45 50 60 V

IF(AV) Average Rectified Forward Current 7.5 A

IFSM Non-Repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave 150 A

Tstg Storage Temperature Range -65 to +175 °C

TJOperating Junction Temperature -65 to +150 °C

Symbol Parameter Value Units

PDPower Dissipation 2.0 W

RθJA Thermal Resistance, Junction to Ambient 60 °C/W

RθJL Thermal Resistance, Junction to Lead 3.0 °C/W

TO-220AC

PIIN2

PIIN1

Case

MBR735 - MBR760 — Schottky Rectifiers

MBR735 - MBR760 Rev. 1.1.0 2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Units

735 745 750 760

VFForward Voltage

IF = 7.5 A, TC = 25°C0.75

IF = 7.5 A, TC = 125°C0.57 0.65

IF = 15 A, TC = 25°C0.84

IF = 15 A, TC = 125°C0.72

IRReverse Current at rated VR TC = 25°C0.10.5

TC = 125°C1550

IRRM Peak Repetitive Reverse Surge Current

2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A

MBR735 - MBR760 — Schottky Rectifiers

MBR735 - MBR760 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Forwar d Current Derating Curve Figure 2. Non-Repetitive Surge Current

Figure 3. Forward Voltag e Chara ct e ristics Figure 4. Reverse Current vs. Reverse Voltage

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

MBR735 - MBR760 — Schottky Rectifiers

MBR735 - MBR760 Rev. 1.1.0 4

Physical Dimensions

Figure 7. TO-220, MOLDED, 2-LEAD (ACTIVE)

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO220A02.pdf.

TO-220 2L

F) TO220A02REVB

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The datasheet is for reference information only.

Rev. I64

Mouser Electronics

Authorized Distributor

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MBR735