SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 1998
FEATURES
*BV
DSS = 100V
* Low Threshold
PARTMARKING DETAIL – SAA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Drain-Gate Voltage VDGR 100 V
Continuous Drain Current at Tamb
=25°C ID170 mA
Pulsed Drain Current IDM 680 mA
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 360 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 100 V ID=0.25mA, VGS
=0V
Gate-Source Threshold
Voltage VGS(th) 0.5 2.0 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 50 nA VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current IDSS 500 nA VDS=100V, VGS=0V
Static Drain-Source
On-State Resistance (1) RDS(on) 6
10 Ω
ΩVGS=10V, ID=170mA
VGS=4.5V, ID=170mA
Forward
Transconductance(1)(2) gfs 80 mS VDS=25V, ID=100mA
Input Capacitance (2) Ciss 25 pF
VDS=25V, VGS=0V, f=1MHz
Common Source
Output Capacitance (2) Coss 9pF
Reverse Transfer
Capacitance (2) Crss 4pF
Turn-On Delay Time (2)(3) td(on) 10 ns
VDD
≈30V, ID=280mA
Rise Time (2)(3) tr10 ns
Turn-Off Delay Time (2)(3) td(off) 15 ns
Fall Time (2)(3) tf25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
BSS123A
D
G
S
