NPN SILICON PLANAR POWER TRANSISTOR
Complementary 2N6609
General Purpose Amplifier specially suited for Power Conditioning Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE
Collector Emitter Voltage VCEO
Collector Emitter Voltage VCEX
Emitter Base Voltage VEBO
Collector Current Continuous IC
Peak (1)
Base Current Continuous IB
Peak (1)
Power Dissipation @ Tc=25ºC PD
Derate Above 25ºC
Operating and Storage Junction Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c)
(1) Pulse Test: Pulse Width =5ms, Duty Cycle<10%
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Collector Emitter Sustaing Voltage VCEO (sus)*IC=0.2A, IB=0 140 V
Collector Emitter Sustaing Voltage VCEX (sus) * IC=0.1A, RBE=100Ω,VBE(off)=1.5V160 V
Collector Emitter Sustaing Voltage VCER (sus) * IC=0.2A, RBE=100Ω150 V
Collector Cut Off Current
ICEO VCE=120V, IB=0 10 mA
Collector Cut Off Current
ICEX VCE=140V, VBE(off)=1.5V 2.0 mA
Tc=150ºC
VCE=140V, VBE(off)=1.5V 10 mA
Collector Cut Off Current
ICBO VCB=140V, IE=0 2.0 mA
Emitter Cut Off Current
IEBO VBE=7V, IC=0 5.0 mA
DC Current Gain hFE*IC=8A, VCE=4V 15 60
IC=16A, VCE=4V 5
Collector Emitter Saturation Voltage VCE(sat) * IC=8A, IB=800mA 1.4 V
IC=16A, IB=3.2A 4.0 V
Base Emitter on Voltage VBE(on)*IC=8A, VCE=4V 2.2 V
150
0.855
- 65 to +200
1.17
16
30
4
15
160
140
160
7V
A
A
W
A
A
UNITS
V
V
V
W/ºC
ºC
ºC/W
Transys
Electronics
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