2004. 1. 29 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTN2222AE
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
·Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
·Complementary to KTN2907AE.
DIM MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
13
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+
_
+
_
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC600 mA
Collector Power Dissipation (Ta=25℃)PC100 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Marking
Z G
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KTN2222AE
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
Input Impedance hie
IC=1mA, VCE=10V, f=1kHz 2 - 8
kΩ
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
Voltage Feedback Ratio hre
IC=1mA, VCE=10V, f=1kHz - - 8
x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
Small-Singal Current Gain hfe
IC=1mA, VCE=10V, f=1kHz 50 - 300
IC=10mA, VCE=10V, f=1kHz 75 - 375
Collector Output Admittance hoe
IC=1mA, VCE=10V, f=1kHz 5 - 35
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant Cc·rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
Noise Figure NF IC=100μA, VCE=10V,
Rg=1kΩ, f=1kHz - - 4 dB
Switching Time
Delay Time tdVCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
-- 10
nS
Rise Time tr- - 25
Storage Time tstg VCC=30V, IC=150mA
IB1=-IB2=15mA
- - 225
Fall Time tf- - 60
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.01 μA
Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 10 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 75 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=10mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6 - - V
DC Current Gain *
hFE(1) IC=0.1mA, VCE=10V 35 - -
hFE(2) IC=1mA, VCE=10V 50 - -
hFE(3) IC=10mA, VCE=10V 75 - -
hFE(4) IC=150mA, VCE=10V 100 - 300
hFE(5) IC=500mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage *
VCE(sat)1 IC=150mA, IB=15mA - - 0.3
V
VCE(sat)2 IC=500mA, IB=50mA - - 1
Base-Emitter Saturation Voltage *
VBE(sat)1 IC=150mA, IB=15mA 0.6 - 1.2
V
VBE(sat)2 IC=500mA, IB=50mA - - 2.0
Transition Frequency fT
VCE=20V, IC=20mA,
f=100MHz 300 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz - - 25 pF
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KTN2222AE
Revision No : 0
C
COLLECTOR CURRENT I (mA)
10
DC CURRENT GAIN hFE
10.5
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V h - I
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
C
T
f - I
0.4 0.8 1.2 1.6
200
400
600
800
FE C
30
50
100
300
500
1K V =10V
CE
TC
10
1
100
10 100 1k 3k
Ta=25 C
V =10V
1000
CE
COMMON EMITTER
Ta=25 C
1.8
1000
I =2mA
B
3 10 30 100 300 1
K
Ta=-25 C
Ta=25 C
Ta=75 C
1000.5 1
0.6
0.4
0.2
0
COLLECTOR-EMITTER SATURATION
CE(sat)
10330
V - I
CE(sat) C
1k300
I /I =10
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
V
CE(sat)
COMMON EMITTER
B
BASE-EMITTER SATURATION
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
3
0.2
0.5
BE(sat)
1
0
10 30 100
C
1k300
0.4
I /I =10
COMMON EMITTER
V - I
BE(sat)
CB
C
0.6
0.8
1.0
1.2
1.4
1.6
VBE(sat)
Ta=-25 C
Ta=25 C
Ta=75 C
COLLECTOR CURRENT I (mA)
0.2
0.05
BASE-EMITTER VOLTAGE V (V)
BE
C
0.3 0.4 0.5 0.6
0.1
0.3
1
3
10
30
100
300
500
0.7 0.8 0.9 1.0
I - V
CBE
Ta=75 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
V =10V
CE
6mA
4mA
8mA
10mA
12mA
14mA
16mA
18mA
20mA
V =1V
CE
V =2V
CE
Ta=25 C
30
300
330300
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KTN2222AE
Revision No : 0
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
COLLECTOR-BASE VOLTAGE V (V)
CB
Cob - VCB
1.0
0.1
10
1.0 10 100 300
COMMON EMITTER
Ta=25 C
100
EMITTER-BASE VOLTAGE V (V)
EB
COLLECTOR INPUT CAPACITANCE Cib (pF)
3.0
30
Cib
Cob
f=1MHz,
EB
Cib - V
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
P (mW)
25 50 75 100 125 150 175
50
100
150
200
