TIP32C
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R209-017,D
ABSOLUATE MAXIUM RATINGS (TA=25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current DC IC -3 A
PULSE ICM -5 A
Base Current IB -1 A
Power Dissipation
TO-220
PD
2 W
TO-126S/TO-126 1.25 W
TO-252 1 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage
(Note) BVCEO I
C=-30mA,IB=0 -100 V
Collector Cutoff Current ICES V
CE=-100V, VBE=0 -200 μA
Collector Cutoff Current ICEO V
CE=-60V, IB=0 -0.3 mA
Emitter Cutoff current IEBO V
BE=-5V, IC=0 -1 mA
Collector-Emitter Saturation Voltage
(Note) VCE(SAT) I
C=-3A, IB=-375mA -1.2 V
Base-Emitter On Voltage* VBE
ON
I
C=-3A, VCE=-4A -1.8 V
DC Current Gain (Note) hFE IC=-1A, VCE=-4V 25
IC=-3A, VCE=-4V 10 50
Current Gain Bandwidth Product fT I
C=-0.5A,VCE=-10V, f=1MHz 3 MHz
Note: Pulse Test: PW≤300μs, Duty Cyle≤2%