IRF 430,431 D86DR2,R1 4.5 AMPERES 500, 450 VOLTS RDS(ON) = 1.5 0 POWER: IMOS [FET FIELD EFFECT POWER TRANSISTOR I This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL This design has been optimized to give superior performance in most switching applications including: switching power = " s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-204AA (TO-3) Also, the extended safe operating area with good linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear oem 9580.09) MAX applications such as audio amplifiers and servo motors. vo 1 f Features + a SEATING PLANE Polysilicon gate Improved stability and reliability Soca Oe @ No secondary breakdown Excellent ruggedness e Ultra-fast switching Independent of temperature L 426(10.82) MIN. 1,050(26.68) MAX.*1 9.675(17.15 [ 0.650(76.51) ? | 1,197(30.40) e Voltage controlled High transconductance REFERENCE TaFT20.50 * * . . POINT a ; 3 e Low input capacitance Reduced drive requirement 206 0) NK | ex Excellent thermal stability Ease of paralleling DRAIN [92951572] DRAIN 0.205(5.21) (CASE) 0.162(4.09) DIA. 0.15(3.84) 2 HOLES 0.440(14.18} 0.420(10.67) maximum ratings (Tce = 25C) (unless otherwise specified) RATING SYMBOL IRF430/D86DR2 IRF431/D86DR1 UNITS Drain-Source Voltage Vpss 500 450 Voits Drain-Gate Voltage, Rgs = IMO VpGR 500 450 Volts Continuous Drain Current @ To = 25C Ip 45 4.5 A @ Tc = 100C 3.0 3.0 A Pulsed Drain Current lom 18 18 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 w/?C Operating and Storage Junction Temperature Range Ty, Tste6 -55 to 150 -55 to 150 C thermal characteristics Thermal! Resistance, Junction to Case ReJc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 161electrical characteristics (Tc = 25 C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF430/D86DR2 BVpss 500 _ _ Volts (Vag = OV, Ip = 250 wA) IRF431/D86DR1 450 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, V@s = OV, To = 25C) _ _ 250 MA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas; Ip = 250 wA) | On-State Drain Current (Vag = 10V, Vpg = 10V) ID(ON) 45 A Static Drain-Source On-State Resistance (V@g = 10V, Ip = 2.5A) Ros(On) _ 1.3 1.5 Ohms Forward Transconductance (Vpg = 10V, Ip = 2.54) fs 178 22 mhos dynamic characteristics Input Capacitance Ves = OV Ciss 650 800s. pF Output Capacitance Vps = 25V Coss _ 90 200 pF Reverse Transfer Capacitance f=1MHz Crss _ 15 60 pF switching characteristics Turn-on Delay Time Vos = 225V ta(on) _ 15 ~~ ns Rise Time Ip = 2.5A, Vag = 15V tr _ 10 ns Turn-off Delay Time RGEN = 500, Res = 12.59 ta(off) _ 40 _ ns FallTime - (Ras (Equiv,) = 102) te _ 25 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 4.5 A Pulsed Source Current Ism _ _ 18 A Diode Forward Voltage Vsp _ 1.0 1.4 Voits (Tc = 25C, Vag = OV, Ig = 4.54) Reverse Recovery Time ter 460 _ ns (Ig = 4.5A, dig/dt = 100A/yusec, To. = 125C) QrRrR _ 4.5 - uC *Pulse Test: Pulse width = 300 us, duty cycle < 2% 24 2.2 40 CONDITIONS: 2.0 Rison) CONDITIONS: Ip = 2.5 A, Vag * 10V = 20 a Vas(TH) CONDITIONS: Ip = 25044, Vos = Vag 8 ul) 1.8 aR & N SION) mw 40 q 16 z 3 z 14 < 1, Ba g & = '? acy 3? RATION IN 1.0 Zz MAY BEL DBY a < 10 2 08 = 08 2 @ 08 & os - a 04 so 04 0.2 0.2 0.1 i 1 2 4 6 810 20 40 60 80100 200 400 600 1000 -40 0 40 80 120 160 Vpg- ORAIN-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rogion; AND Vosi7H) VS. TEMP. 162