© Semiconductor Components Industries, LLC, 2017
May, 2018 − Rev. P1 1Publication Order Number:
NOA1214/D
NOA1214
Product Preview
Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1214 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is typically 10 mA at dark and its quiescent
current consumption is typically 1 nA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1214 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
Features
•Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
•Photopic Spectral Response
•Dynamic Dark Current Compensation
•Three Selectable Output Current Gain Modes in Approximately 10x
Steps
•Power Down Mode
•Less than 21 mA at 100 lux Active Power Consumption in Medium
Gain Mode (typically 10 mA at Dark)
•1 nA Quiescent Power Dissipation in Power Down Mode at All Light
Levels
•Linear Response Over the Full Operating Range
•Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
•Wide Operating Voltage Range (2 V to 5.5 V)
•Wide Operating Temperature Range (−40°C to 85°C)
•Drop−in Replacement Device in 1.6 x 1.6 mm Package
•These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Applications
•Saves display power in applications such as:
♦Cell Phones, PDAs, MP3 players, GPS
♦Cameras, Video Recorders
♦Mobile Devices with Displays or Backlit Keypads
♦Laptops, Notebooks, Digital Signage
♦LCD TVs and Monitors, Digital Picture Frames
♦Automobile Dashboard Displays and Infotainment
♦LED Indoor/Outdoor Residential and Street Lights Figure 1. Typical Application Circuit
hn
Photo
Diode Amp
GB2 GB1
IOUT RL
VDD
VSS
CL
ADC
C1
1μ
Vin = 2 to 5.5V
IC1
NOA1212
IC2
h
Photo
Diode Amp
GB2 GB1
IOUT
GS2
RL
VDD
VSS
CL
ADC
C1
1μ
Vin = 2 to 5.5V
IC1
NOA1214
IC2
GS1
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Device Package Shipping†
ORDERING INFORMATION
NOA1214CUTAG* CUDFN6
(Pb−Free) 2500 /
Tape & Reel
CUDFN6
CU SUFFIX
CASE 505AL
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PIN ASSIGNMENT
(Top View)
1
2
3
6
5
4
VDD
VSS
GB1
IOUT
NC
GB2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
*Temperature Range: −40°C to 85°C.
1
NOA1214
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2
hn
Photo
Diode
Reference
Diode
Amp
GB2 GB1
IOUT
RL
VOUT
h
Photo
Diode
Reference
Diode
Amp
GB2 GB1
IOUT
GS2
RL
VOUT
Figure 2. Simplified Block Diagram
GS1
Table 1. PIN FUNCTION DESCRIPTION
Pin Pin Name Description
1 VDD Power pin.
2 VSS Ground pin.
3 GB1 In conjunction with GB2, selects between three gain modes and power down.
4 GB2 In conjunction with GB1, selects between three gain modes and power down.
5 NC Not connected. This may be connected to ground or left floating.
6 IOUT Analog current output.
EP VSS Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input power supply VDD 6 V
Input voltage range VIN −0.3 to VDD + 0.3 V
Output voltage range VOUT −0.3 to VDD + 0.2 V
Output current range Io0 to 15 mA
Maximum Junction Temperature TJ(max) −40 to 85 °C
Storage Temperature TSTG −40 to 85 °C
ESD Capability, Human Body Model (Note 1) ESDHBM 2 kV
ESD Capability, Charged Device Model (Note 1) ESDCDM 750 V
ESD Capability, Machine Model (Note 1) ESDMM 150 V
Moisture Sensitivity Level MSL 3 −
Lead Temperature Soldering (Note 2) TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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3
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C)
Rating Test Conditions Symbol Min Typ Max Unit
Power supply voltage VDD 2.0 3.0 5.5 V
Power supply current VDD = 3.0 V, Ev = 0 lux, H−Gain IDD_0 1.0 9 17 mA
Power supply current VDD = 3.0 V, Ev = 100 lux, M−Gain IDD_100 1.0 13 21 mA
Power down current All light levels IDD_PD 1.0 nA
Output current, high−gain Ev = 100 lux, White LED Io_high 19.6 28 36.4 mA
Dark output current, high−gain VDD = 3.0 V, Ev = 0 lux Io_dark 10 nA
Wavelength of maximum
response lm550 nm
White LED/fluorescent current
ratio Ev = 100 lux rLE 1.0
Incandescent/fluorescent
current ratio Ev = 100 lux rIF 1.09
Maximum output voltage Ev = 100 lux, RL = 22 k, H−Gain VOMAX VDD–0.4 VDD–0.1 VDD V
Power down time Ev = 100 lux, H−Gain to PD tPD 1.5 ms
Wake up time Ev = 100 lux, PD to H−Gain twu 300 ms
Low level input voltage VIL −0.2 0.25 VDD V
High level input voltage VIH 0.75 VDD VDD+0.2 V
Operating free−air temperature
range TA−40 85 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOA1214
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4
TYPICAL CHARACTERISTICS
Ev (lux)
11 10 100 1000 10000
1 kW Load
10 kW Load
100 kW Load
1000
10
100
10000
OUTPUT CURRENT (mA)
VDD = 3.3 V
Figure 3. Spectral Response (Normalized) Figure 4. Light Source Dependency
(Normalized to Fluorescent Light)
Figure 5. Output Current vs. Ev Figure 6. Output Current vs. Ev
(High Gain Mode)
Figure 7. Output Current vs. Ev, 0−1000 lux
(High Gain Mode) Figure 8. Output Current vs. Ev, 0−100 lux
(High Gain Mode)
0 0.5 1.0 1.5 2.
0
Incandescent
(2850K)
Fluorescent
(2700K)
White LED
(5600K)
Fluorescent
(5000K)
Ratio
WAVELENGTH (nm)
0.5
200 300 400 500 600 700 800 900 1000
ALS
Human Eye
0.4
0.3
0.2
0.1
0
0.8
0.6
0.7
1.0
0.9
OUTPUT CURRENT (Normalized)
Ev (lux)
1
0.01 0.1 1 10 100 1000 10000100000 1000000
High Gain
Medium Gain
Low Gain
0.1
0.01
0.001
0.0001
0
.00001
1000
10
100
10000
OUTPUT CURRENT (
m
A)
VDD = 3.3 V
Ev (lux)
OUTPUT CURRENT (
m
A)
350
0 200 400 600 800 1000
White LED (5600K)
300
200
150
100
0
400
Ev (lux)
OUTPUT CURRENT (mA)
35
02040608010
0
White LED (5600K)
25
20
15
10
0
40
250
50
30
5
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5
TYPICAL CHARACTERISTICS
Figure 9. Output Current vs. Angle
(End View, Normalized) Figure 10. Output Current vs. Angle
(Side View, Normalized)
Figure 11. Output Current at 0 lux vs.
Temperature (High Gain Mode) Figure 12. Output Current at 100 lux vs.
Temperature
Figure 13. Supply Current at 0 lux vs.
Temperature (High Gain Mode) Figure 14. Supply Current at 100 lux vs.
Temperature (High Gain Mode)
TEMPERATURE (°C)
OUTPUT CURRENT (nA)
5
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
4
3
2
1
0
6
TEMPERATURE (°C)
OUTPUT CURRENT (Normalized to 20C)
1.0
−60 −40 −20 0 20 40 60 80 10
0
VDD = 3.3 V
0.8
0.6
0.4
0.2
0
1.6
1.2
1.4
High Gain Mode
Medium Gain Mode
Low Gain Mode
TEMPERATURE (°C)
I
DD
(
m
A)
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
6
4
2
0
12
8
10
14
TEMPERATURE (°C)
IDD (mA)
20
−60 −40 −20 0 20 40 60 80 10
0
VDD = 3.3 V
15
10
5
0
25
30
45
35
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 010 20 30 40 50
60
70
80
90
100
110
120
130
140
150
160
180 170−170
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50−40−30 −20 −10
Q
END VIEW
1
2
3
6
5
4
TOP VIEW
−90o90o
Q
SIDE VIEW
TOP VIEW
1
2
3
6
5
4
−90o90o
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10 20 30 40 50
60
70
80
90
100
110
120
130
140
150
160
170
180
−170
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50−40−30 −20
−10
40
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6
TYPICAL CHARACTERISTICS
Figure 15. Output Current at 100 lux vs. Supply
Voltage (High Gain Mode) Figure 16. Supply Current vs. Ev
(High Gain Mode)
Figure 17. Supply Current vs. Supply Voltage
(High Gain Mode)
VDD (V)
OUTPUT CURRENT (Normalized)
1.0
0123456
0.8
0.6
0.4
0.2
0
1.6
1.2
Ev (Lux)
SUPPLY CURRENT (mA)
300
0 200 400 600 800 1000
250
200
150
50
0
500
400
450
1.4
VDD (V)
SUPPLY CURRENT (mA)
50
01 23456
40
30
20
10
0
60
White LED (5600K)
100
350
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7
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
The NOA1214 employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
Table 4. PROGRAMMABLE GAIN SETTINGS
GB2 GB1 Mode Approximate Output
Current @ 100 lux Approximate Output
Current @ 1000 lux Saturation
0 0 Power Down − − −
0 1 High Gain 28 mA305 mA~10,000 lux
1 0 Medium Gain 3.10 mA32.5 mA~100,000 lux
1 1 Low Gain 0.34 mA3.45 mA> 100,000 lux
Power Down Mode
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
External Component Selection
The NOA1214 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable t o filter the ef fects of 50/60 Hz flicker or other light
source transients.
Conversion from current to voltage may be accomplished
by adding load resistor RL to the output. The value of RL is
bounded on the high side by the potential output saturation
of the amplifier at high ambient light levels. RL is bounded
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the High−Gain mode.
IOUT +ǒ28 mAń100 luxǓ*EV(eq. 1)
By adding RL to the output, IOUT is converted into a
voltage according to Equation 2.
VOUT +IOUT *RL+ǒ28 mAń100 luxǓ*EV*RL(eq. 2)
The range of the output voltage is limited by the output
stage to the VOMAX parameter value of VDD – 0.4 V at the
maximum desired EV as shown in Equation 3. Equation 4
computes the value for RL (High−Gain mode).
VOMAX +ǒ28 mAń100 luxǓ*EVMAX *RL(eq. 3)
RL+ǒVDD *0.4 VǓńEVMAX *ǒ100 luxń28 mAǓ(eq. 4)
For example, consider a 5 V supply with a desired EVMAX
= 1000 lux, the value of RL would be 16.4 kW. The value for
RL can easily be computed for different NOA1214 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor CL can be used to form a low−pass
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
CL+1ń2pfcRL(eq. 5)
For our example, to filter out 60Hz flicker the value of CL
would be 160 nF.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1 mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected t o VSS pin 2 and should be soldered to the printed
circuit board.
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8
PACKAGE DIMENSIONS
CUDFN6 1.6x1.6, 0.5P
CASE 505AL
ISSUE A NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.10 AND 0.20MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
D
E
B
C0.10
PIN 1
2X
2X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
L
D2
E2
C
C0.10
C0.10
C0.08 A1 SEATING
PLANE
6X
NOTE 3
b
6X
0.10 C
0.05 C
ABB
DIM MIN MAX
MILLIMETERS
A0.55 0.65
A1 0.00 0.05
b0.15 0.25
D1.60 BSC
D2 1.05 1.15
E1.60 BSC
E2 0.45 0.55
e0.50 BSC
L0.25 0.35
13
6
NOTE 4
PIN ONE
A3 0.20 REF
A3
A
e
b2 0.15 REF
4
b2
MOUNTING FOOTPRINT*
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
6X
0.48
0.50
PITCH
1.20
1.90
6X
0.28
0.60
1
RECOMMENDED
L2 0.17 REF
REFERENCE
L2
A
M
0.10 BC
A
M
0.10 BC
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