Z0410MF0AA2 - STMICROELECTRONICS

July 2015

DocID027600 Rev 2

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This is information on a product in full production.

www.st.com

STF26N60M2, STFI26N60M2

N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet - production data

Figure 1: Internal schemat ic di agram

Features

Order code VDS @

TJmax RDS(on)

max. ID PTOT

STF26N60M2 650 V 0.165 Ω 20 A 30

STFI26N60M2

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• 100% avalanc he tes ted

• Zener-protected

Applications

• Switching applications

• LCC converters, resonant converters

Description

These devices are N-chann el Po wer MOSFET s

developed using MDmes h™ M2 techn ology.

Thanks to their strip layout and improved vertical

structur e, these devices exhib it lo w on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order code Marking Package Packing

STF26N60M2 26N60M2 TO-220FP Tube

STFI26N60M2 I²PAKFP

TO-220FP I2PAKFP (TO-281)

123

AM15572v1_no_tab

D(2)

G(1)

S(3)

Contents

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Contents

1 Electrical ratings ............................................................................. 3

2 Electrical characteristics ................................................................ 4

2.1 Electrical characteristics (curves) ...................................................... 6

3 Test cir c uit s ..................................................................................... 8

4 Package information ....................................................................... 9

4.1 TO-2 20F P package in for mation ...................................................... 10

4.2 I²PAKFP (TO-281) package information ......................................... 12

5 Revision history ............................................................................ 14

STF26N60M2, STFI26N60M2

Electrical ratings

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1 Electrical ratings

Table 2: A bsolut e maximum r ating s

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

ID(1) Drain current (continuous) at Tcase = 25 °C 20 A

Drain current (continuous) at Tcase = 100 °C 13

IDM

(2)

Drain current (pulsed) 80 A

PTOT Total dissipation at Tcase = 25 °C 30 W

dv/dt

(3)

Peak diode recovery voltage slope 15 V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness 50

VISO Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C) 2.5 kV

Tstg Storage temperat ure -55 to 150 °C

Tj Operating junction temper at ure

Notes:

(1) Limited by maximum junction temperature.

(2) Pulse width is limited by safe operating area.

(3) ISD ≤ 20 A, di/dt=400 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.

(4) VDS ≤ 480 V.

Table 3: Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resi stan ce jun cti on-case 4.2 °C/W

Rthj-amb T hermal resi stan ce jun cti on-ambient 62.5

Table 4: Avalanche characteristics

Symbol Parameter Value Unit

IAR

(1)

Avalanche current, repetitive or not repetitive 3.8 A

EAR(2) Single pulse avalanche energy 250 mJ

Notes:

(1) Pulse width limited by Tjmax.

(2) starting Tj = 25 °C , ID = IAR, VDD = 50 V.

Electrical characteristics

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2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown

voltage VGS = 0 V, ID = 1 mA 600

IDSS Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1 µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS Gate-body leakage

current VDS = 0 V, VGS = ±25 V

±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on) Static drain-source on-

resistance VGS = 10 V, ID = 10 A

0.14 0.165 Ω

Table 6: Dy namic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capac itan ce

VDS = 100 V, f = 1 MHz,

VGS = 0 V

- 1360 -

Coss Output capacitance - 88 -

Crss Reverse transfer

capacitance - 2 -

Coss eq.(1) Equivalent output

capacitance VDS = 0 to 480 V, VGS = 0 V - 124 - pF

RG Intrinsic gate res istance f = 1 MHz, ID = 0 A - 4 - Ω

Qg Total gate charge VDD = 480 V, ID = 20 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

- 34 -

Qgs Gate-source charge - 5.6 -

Qgd Gate-drain charge - 16.3 -

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 10 A

RG = 4.7 Ω, VGS = 10 V (see

Figure 14: "Switching times

test circuit for resi sti ve load "

and Figure 19: "Switching time

waveform")

- 20.2 -

tr Rise time - 8 -

td(off) Turn-off delay time - 66 -

tf Fall time - 10 -

STF26N60M2, STFI26N60M2

Electrical characteristics

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Table 8: Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current

20 A

ISDM(1) Source-drain current

(pulsed)

80 A

VSD(2) Forward on voltage VGS = 0 V, ISD = 20 A -

1.6 V

trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

- 360

Qrr Reverse recovery charge - 5

µC

IRRM Reverse recovery current - 27

trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circ uit for

inductive load switching and

diode recovery times")

- 556

Qrr Reverse recovery charge - 8

µC

IRRM Reverse recovery current - 29

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Electrical characteristics

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2.1 Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer char a cter i st ics

Figure 6: Gate charge vs gate-source voltage

Figure 7: Static drain-source on-resistance

STF26N60M2, STFI26N60M2

Electrical characteristics

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Figure 8: Capacitance variations

Figure 9: Normalized gate threshold voltage

vs temperature

Figure 10: Normalized on-resistance vs

temperature

Figure 11: Normalized V(BR)DSS vs

temperature

Figure 12: Output capacitance stored energy

Figure 13: Source-drain diode forward

characteristics

Test circuits

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3 Test circuits

Figure 14: Switching times test circuit for resistive

load

Figure 15: Gate charge t est cir cuit

Figure 16: Test circuit for inductive load switching

and diode recovery times

Figure 17: Unclamped inductive load test circuit

Figure 18: Unclamped inductive waveform

Figure 19: Switching time waveform

STF26N60M2, STFI26N60M2

Package information

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4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

Package information

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4.1 TO-220FP package information

Figure 20: TO-220FP package outline

7012510_ Rev_K_B

STF26N60M2, STFI26N60M2

Package information

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Table 9: TO-220FP package mechanical data

Dim. mm

Min. Typ. Max.

A 4.4

4.6

B 2.5

2.7

D 2.5

2.75

E 0.45

0.7

F 0.75

F1 1.15

1.70

F2 1.15

1.70

G 4.95

5.2

G1 2.4

2.7

H 10

10.4

L3 28.6

30.6

L4 9.8

10.6

L5 2.9

3.6

L6 15.9

16.4

L7 9

9.3

Dia 3

3.2

Package information

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4.2 I²PAKFP (TO-281) package information

Figure 21: I²PAKFP (TO-281) package outline

8291506 Re v. C

STF26N60M2, STFI26N60M2

Package information

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Table 10: I²PAKFP (TO-281) mechanical data

Dim. mm

Min. Typ. Max.

A 4.40 - 4.60

B 2.50

2.70

D 2.50

2.75

D1 0.65

0.85

E 0.45

0.70

F 0.75

1.00

1.20

G 4.95

5.20

H 10.00

10.40

L1 21.00

23.00

L2 13.20

14.10

L3 10.55

10.85

L4 2.70

3.20

L5 0.85

1.25

L6 7.50 7.60 7.70

Revision history

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5 Revision history

Table 11: Document revision history

Date Revision Changes

05-Mar-2015 1 First release.

30-July-2015 2

Text and formatting changes throughout document

Datasheet prom oted from preliminary data to production data

In Section Electrical characteristics:

- updated and rena med tabl e Static (was On/off stat es)

- updated table Dynamic, Switching times and Source-drain diode

- added section Electr ic al char acter ist ic s (cur ves)

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