1165898
Page <3> 22/10/08 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Second Breakdown
Second Breakdown Collector Current with Base Forward Biased
t = 1.0s (Non-repetitive) (VCE = 100V dc) IS/b 0.2 - Adc
On Characteristic (1)
DC Current Gain
(lC= 5.0A dc, VCE = 2.0V dc)
(lC= 10A dc, VCE = 2.0V dc)
hFE 12
6.0
60
30
-
Collector-Emitter Saturation Voltage
(lC= 10A dc, IB= 2.0A dc)
(lC= 15A dc, IB= 3.0A dc)
(lC= 10A dc, IB= 2.0A dc, TC= 100°C)
VCE (sat) -1.5
5.0
2.5 V dc
Base-Emitter Saturation Voltage
(lC= 10A dc, IB= 2.0A dc)
(lC= 10A dc, IB= 2.0A dc, TC= 100°C
VBE (sat) - 1.6
Dynamic Characteristics
Current-Gain-Bandwidth Product
(lC= 500mA dc, VCE = 10V dc, ftest = 1.0MHz) fT6.0 28 MHz
Output Capacitance
(VCB = 10V dc, IE= 0, ftest = 1.0MHz) Cob 125 500 pF
Resistive Load
Delay Time
(VCC = 250V, IC= 10A,
IB1 = IB2 = 2.0A, tp= 100µS,
Duty Cycle ≤2.0%
td- 0.05
µs
Rise Time tr- 1.0
Storage Time ts- 4.0
Fall Time tf- 0.7
Inductive Load, Clamped
Storage Time (IC= 10A (pk), Vclamp = Rated VCEX, IB1 = 2.0A,
VBE (off) = 5.0V dc, TC= 100°C)
ts- 5.0
µs
Fall Time tf- 1.5
Storage Time (IC= 10A (pk), Vclamp = Rated VCEX, IB1 = 2.0A,
VBE (off) = 5.0V dc, TC= 25°C)
tsTypical 2.0
µs
Fall Time tfTypical 0.09
Switching Characteristics
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.