Semiconductor Group 1 04.96
PNP Silicon AF Transistors BC 856W ... BC 860W
Features
●For AF input stages and driver applications
●High current gain
●Low collector-emitter saturation voltage
●Low noise between 30 Hz and 15 kHz
●Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Type Marking Package1)
Pin Configuration
BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
SOT-323
123
Ordering Code
(tape and reel)
B E C
1)For detailed information see chapter Package Outlines.
BC 856W ... BC 860W
Semiconductor Group 2
Maximum Ratings
Description Symbol Unit
Collector-emitter voltage VCEO V
Collector-base voltage VCBO V
Collector-emitter voltage VCES V
Collector current ICmA
Total power dissipation, TS=115 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg –65 to 150 ˚C
Thermal Resistance
Junction - ambient1) Rth JA ≤ 240 K/W
Emitter-base voltage VEBO V
Collector peak current ICM mA
100
555
250
150
80 50 30
200
Junction - soldering point Rth JS ≤ 105 K/W
65 45 30
80 50 30
BC 856W BC 857W
BC 860W BC 858W
BC 859W
BC 856W ... BC 860W
Semiconductor Group 3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 10 mA BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V(BR)CE0 65
45
30
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–15
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V(BR)CB0 80
50
30
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 1 µAV(BR)EB0 5––
mV
Collector-emitter saturation voltage1)
I
C = 10 mA, IB = 0.5 mA
I
C = 100 mA, IB = 5 mA
VCEsat –
–75
250 300
650
–DC current gain
I
C = 10 µA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
I
C = 2 mA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
hFE
–
–
–
125
220
420
140
250
480
180
290
520
–
–
–
250
475
800
Base-emitter saturation voltage1)
I
C = 10 mA, IB = 0.5 mA
I
C = 100 mA, IB = 5 mA
VBEsat –
–700
850 –
–
Collector-emitter breakdown voltage
I
C = 10 µA, VBE = 0 BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
V(BR)CES 80
50
30
–
–
–
–
–
–
Base-emitter voltage
I
C = 2 mA, VCE = 5 V
I
C = 10 mA, VCE = 5 V
VBE(on) 600
–650
–750
820
1)
Pulse test: t≤300 µs, D = 2 %.
BC 856W ... BC 860W
Semiconductor Group 4
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValuesParameter Symbol
min. typ. max.
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 100 MHz fT– 250 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –3–
Input capacitance
VCB = 0.5 V, f = 1 MHz Cibo –10–
kΩShort-circuit input impedance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h11e
–
–
–
2.7
4.5
8.7
–
–
–
dBNoise figure
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f= 30 Hz … 15 kHz BC 859W
BC 860W
f= 1 kHz, ∆f = 200 Hz BC 859W
BC 860W
F
–
–
–
–
1.2
1.0
1.0
1.0
4
3
4
4
10–4
Open-circuit reverse voltage transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h12e
–
–
–
1.5
2.0
3.0
–
–
––Short-circuit forward current transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h21e
–
–
–
200
330
600
–
–
–
µSOpen-circuit output admittance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h22e
–
–
–
18
30
60
–
–
–
µVEquivalent noise voltage
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f= 10 Hz … 50 Hz BC 860W
Vn
– – 0.110
BC 856W ... BC 860W
Semiconductor Group 5
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance CCB0 =f(VCB0)
Emitter-base capacitance CEB0 =f(VEB0)
Transition frequency fT=f(IC)
VCE = 5 V
BC 856W ... BC 860W
Semiconductor Group 6
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
DC current gain hFE = f (IC)
VCE = 5 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
BC 856W ... BC 860W
Semiconductor Group 7
h parameter he=f(IC)normalized
VCE = 5 V
Noise figure F=f(VCE)
IC = 0.2 mA, RS = 2 kΩ,f = 1 kHz
h parameter he=f(VCE)normalized
IC=2mA
Noise figure F=f(f)
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
BC 856W ... BC 860W
Semiconductor Group 8
Noise figure F=f(IC)
VCE = 5 V, f = 120 Hz
Noise figure F=f(IC)
VCE = 5 V, f = 10 kHz
Noise figure F=f(IC)
VCE = 5 V, f = 1 kHz
