CJD44H11 NPN CJD45H11 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11 and CJD45H11 are complementary silicon power transistors manufactured in a surface mount package, and designed for switching and power amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO 80 UNITS V Emitter-Base Voltage VEBO IC 5.0 V 8.0 A ICM PD 16 A 20 W PD TJ, Tstg 1.75 W -65 to +150 C Thermal Resistance JC 6.25 C/W Thermal Resistance JA 71.4 C/W Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TA=25C) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=80V IEBO VEB=5.0V BVCEO VCE(SAT) VBE(SAT) hFE hFE fT IC=30mA IC=8.0A, IB=400mA IC=8.0A, IB=800mA VCE=1.0V, IC=2.0A VCE=1.0V, IC=4.0A TYP MAX 10 UNITS A 50 A 1.0 V 1.5 V 80 V 60 40 60 MHz fT VCE=10V, IC=500mA, f=20MHz (CJD44H11) VCE=10V, IC=500mA, f=20MHz (CJD45H11) 50 MHz Cob Cob VCB=10V, IE=0, f=0.1MHz (CJD44H11) VCB=10V, IE=0, f=0.1MHz (CJD45H11) 120 pF 220 pF td + tr td + tr IC=5.0A, IB1=500mA (CJD44H11) IC=5.0A, IB1=500mA (CJD45H11) 320 ns 150 ns ts 450 ns tf IC=5.0A, IB1=IB2=500mA IC=5.0A, IB1=IB2=500mA (CJD44H11) 130 ns tf IC=5.0A, IB1=IB2=500mA (CJD45H11) 100 ns R3 (21-January 2013) CJD44H11 NPN CJD45H11 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (21-January 2013) w w w. c e n t r a l s e m i . c o m