BUH51 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

  

  

The BUH51 has an application specific state–of–art die designed for use in

50 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current

during either the start–up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

•Robustness Thanks to the Technology Developed to Manufacture

this Device

•Motorola “6 SIGMA” Philosophy Providing Tight and Reproducible

Parametric Distributions

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

500

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

800

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

ÎÎÎÎÎ

VCES

ÎÎÎÎÎÎ

800

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎ

ICM

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

Base Current — Peak (1)

ÎÎÎÎÎ

IBM

ÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Total Device Dissipation @ TC = 25

*Derate above 25°C

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.4

ÎÎÎÎÎ

Watt

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to 150

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance

— Junction to Case

— Junction to Ambient

ÎÎÎÎÎ

RθJC

RθJA

ÎÎÎÎÎÎ

2.5

100

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎ

260

ÎÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BUH51/D

 Motorola, Inc. 1995



POWER TRANSISTOR

3 AMPERES

800 VOLTS

50 WATTS

CASE 77–07

TO–225AA TYPE

BUH51

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

500

ÎÎÎÎ

550

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

ÎÎÎÎ

VCBO

ÎÎÎÎ

800

ÎÎÎÎ

950

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

ÎÎÎÎ

VEBO

ÎÎÎÎ

12.5

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

100

1000

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎÎ

100

1000

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

0.92

0.8

ÎÎÎ

1.1

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

0.3

0.32

ÎÎÎ

0.5

0.6

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 1 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

7.5

6.2

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 3 µs after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎÎÎ

C = 1 Adc, IB1 = 0.2 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

1.7

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 3 µs after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 0.2 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Determined 3 µs after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎÎÎ

C = 2 Adc, IB1 = 0.4 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎ

5.1

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

B1 reaches

90% of final IB1

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

VCC = 300 V

ÎÎÎÎÎÎ

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(VEB = 8 Vdc, f = 1 MHz)

ÎÎÎÎ

Cib

ÎÎÎÎ

200

ÎÎÎ

500

ÎÎÎÎ

BUH51

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc, IB1 = 0.2 Adc

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

110

125

ÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.2 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

3.5

4.1

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ton

ÎÎÎÎ

700

1250

ÎÎÎ

1000

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.4 Adc

VCC = 300 Vdc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

toff

ÎÎÎÎ

1.75

2.1

ÎÎÎ

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

200

320

ÎÎÎ

300

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

3.4

ÎÎÎ

3.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.2 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

350

640

ÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tfi

ÎÎÎÎ

140

300

ÎÎÎ

200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

tsi

ÎÎÎÎ

2.3

2.8

ÎÎÎ

2.75

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.4 Adc

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

400

725

ÎÎÎ

600

ÎÎÎÎ

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 1 V

Figure 2. DC Current Gain @ 3 Volt

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 3 V

0.010.01

BUH51

4 Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 3. DC Current Gain @ 5 Volt Figure 4. Collector–Emitter Saturation Voltage

0.01 1010.10.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

TJ = –20

IC/IB = 5

VCE, VOLTAGE (VOLTS)

Figure 5. Collector–Emitter Saturation Voltage

0.1 100.10.001 IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base–Emitter Saturation Region

1.5

0.5

0100.10.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

TJ = –20

VCE, VOLTAGE (VOLTS)

VBE, VOLTAGE (VOLTS)

TJ = 125

TJ = 25

TJ = –20

0.1

IC/IB = 10

IC/IB = 5

Figure 7. Base–Emitter Saturation Region

1.5

0.5

01010.10.001 IC, COLLECTOR CURRENT (AMPS)

VBE, VOLTAGE (VOLTS)

TJ = 125

TJ = 25

TJ = –20

Figure 8. Collector Saturation Region

0.5

01010.01 IB, BASE CURRENT (A)

1.5

100

11010.10.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 5 V

0.01 0.01

0.01

IC/IB = 10

VCE, VOLTAGE (VOLTS)

0.1

TJ = 25

VCE(sat)

(IC = 500 mA)

1 A

4 A

2 A

3 A

BUH51

Motorola Bipolar Power Transistor Device Data

t, TIME ( s)

TYPICAL STATIC CHARACTERISTICS

Figure 9. Capacitance

1000

10 100101 VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib

TJ = 25

f(test) = 1 MHz

Cob

Figure 10. Resistive Breakdown

700

400 10000010010 RBE (

Ω

)

BVCER (VOLTS)

TJ = 25

BVCER @ 10 mA

1000

900

800

600

500 BVCER(sus) @ 200 mA, 25 mH

100001000

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Resistive Switching, ton

2500

1000

0310 IC, COLLECTOR CURRENT (AMPS)

1500

500 TJ = 125

TJ = 25

IB1 = IB2

VCC = 300 V

PW = 40

Figure 12. Resistive Switch Time, toff

0310 IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

1310 IC, COLLECTOR CURRENT (AMPS)

2TJ = 125

TJ = 25

IC/IB = 5

TJ = 125

TJ = 25

Figure 13 Bis. Inductive Storage Time, tsi

021.50.5 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

2000

IC/IB = 5

t, TIME (ns)

IB1 = IB2

VCC = 300 V

PW = 40

t, TIME ( s)

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

IC/IB = 10

BUH51

6 Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

1000

400

02.510.5 IC, COLLECTOR CURRENT (AMPS)

800

200

1.5

TJ = 125

TJ = 25

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

800

02.51.50.5 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

TJ = 125

TJ = 25

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Htc

tfi

600

400

t, TIME (ns)

600

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Htc

tfi

11042 hFE, FORCED GAIN 8

TJ = 125

TJ = 25

Figure 16. Inductive Storage Time

2IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

Figure 17. Inductive Fall Time

450

0103 hFE, FORCED GAIN

350

tfi, FALL TIME (ns)

400

250

150

4 6 7

TJ = 125

TJ = 25

300

200

100

, STORAGE TIME (tsi

IC = 2 A

IC = 0.8 A

5 8 9

IBoff = IB2

VCC = 15 V

VZ = 300 V

LC = 200

IC = 2 A IC = 0.8 A

Figure 18. Inductive Crossover Time

800

300

100

hFE, FORCED GAIN

600

tc, CROSSOVER TIME (ns)

700

400

500

200

103 4 6 75 8 9

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 125

TJ = 25

CIC = 2 A

IC = 0.8 A

tfi

BUH51

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Dynamic Saturation Voltage

Measurements Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 =

∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

+15 V

F150

Ω

3 W 100

Ω

3 W

MPF930

+10 V

Ω

COMMON

–Voff

500

MPF930

MTP8P10

MUR105

MJE210 MTP12N10

MTP8P10

150

Ω

3 W

100

Iout

RB1

RB2

IC PEAK

VCE PEAK

VCE

IB1

IB2

TIME

VCE

0 V

90% IB

dyn 1

dyn 3

0820 TIME 6

1 3 5 7

Vclamp tc

tfi

90% IC

10% IC

90% IB1

10% Vclamp

tsi

TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

016010020 TC, CASE TEMPERATURE (

0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN

DERATING

40 80 120

THERMAL DERATING

BUH51

8 Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC–VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using

the appropriate curve on Figure 21.

TJ(pk) may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn–off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating

area (Figure 23). This rating is verified under clamped

conditions so that the device is never subjected to an

avalanche mode.

Figure 22. Forward Bias Safe Operating Area

100

0.01 100010 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

0900200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100 500

0.1

IC, COLLECTOR CURRENT (AMPS)

DC 5 ms

1 ms 10

GAIN

≥

–1.5 V

–5 V

≤

125

LC = 500

300 400 700600 800

EXTENDED

SOA

0 V

TYPICAL THERMAL RESPONSE

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH51

0.01 100.10.01 t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

JC(t) = r(t) R

JC = 2.5

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

BUH51

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

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