TIP42B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general purpose amplifier and switching applications.

•Collector–Emitter Saturation Voltage —

VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A

VCEO(sus) = 80 Vdc (Min) — TIP41B, TIP42B

VCEO(sus) = 100 Vdc (Min) — TIP41C, TIP42C

•High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO–220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

TIP41A

TIP42A

ÎÎÎ

TIP41B

TIP42B

ÎÎÎÎ

TIP41C

TIP42C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.52

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TA = 25

Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy (1)

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

62.5

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.92

ÎÎÎ

C/W

(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP41A/D

 Motorola, Inc. 1995













6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–80–100 VOLTS

65 WATTS

*Motorola Preferred Device





 



CASE 221A–06

TO–220AB

REV 1

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) TIP41A, TIP42A

(IC = 30 mAdc, IB = 0) TIP41B, TIP42B

TIP41C, TIP42C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current TIP41A, TIP42A

(VCE = 30 Vdc, IB = 0) TIP41B, TIP41C

(VCE = 60 Vdc, IB = 0) TIP42B, TIP42C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0) TIP41A, TIP42A

(VCE = 80 Vdc, VEB = 0) TIP41B, TIP42B

(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

400

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Figure 1. Power Derating

T, TEMPERATURE (

0 100

160

60 80

40 140

Figure 2. Switching Time Test Circuit

0.06

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02 0.4 6.0

0.07

1.0

4.0

TJ = 25

VCC = 30 V

IC/IB = 10

t, TIME ( s)

0.5

0.3

0.1

0.05

0.1 0.6 1.0

td @ VBE(off)

≈

5.0 V

0.03

0.7

2.0

0.2 2.0

20 120

PD, POWER DISSIPATION (WATTS)

1.0

2.0

3.0

4.0

+11 V 25

–9.0 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

0.2

     

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 1.0 100

JC(t) = r(t) R

JC = 1.92

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10 205.0 60 100

Figure 5. Active–Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN LTD

BONDING WIRE LTD

THERMAL LIMITATION @ TC = 25

(SINGLE PULSE)

1.0 ms

2.0

1.0

5.0

IC, COLLECTOR CURRENT (AMP)

0.5 ms

CURVES APPLY BELOW RATED VCEO

3.0

0.3

40 80

5.0 ms

TJ = 150

TIP41A, TIP42A

TIP41B, TIP42B

TIP41C, TIP42C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.1 0.4 0.6 4.00.06 1.0 2.00.2

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn–Off Time

5.0

t, TIME ( s)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05 6.0 1.0 3.0 5.0 200.5 102.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

C, CAPACITANCE (pF)

200

100

30 30 50

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2 Cib

Cob

3.0

TJ = 25

     

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

TJ, JUNCTION TEMPERATURE (

103

–0.3

101

100

10–2

102

10–1

10–3

10 M

100 k

10 k

0.1 k

1.0 M

1.0 k

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.1 0.2 0.4 6.00.06

100

7.0

0.3

VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0 1.0 2.00.6

1.6

2.0

20 30 100 100010

0.8

0.4

0300 500200

TJ = 150

–55

1.2

2.0

0.06 IC, COLLECTOR CURRENT (AMP)

1.6

0.8

1.2

0.4

00.1 0.2 0.3 0.4 0.6 1.0

+2.5

IC = 1.0 A

20 60 80 100 120 16014040

V, VOLTAGE (VOLTS)

TJ = 25

2.5 A 5.0 A

2.0 3.0 4.0 6.0

VBE(sat) @ IC/IB = 10

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 10

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+1.0

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

*APPLIES FOR IC/IB

≤

hFE/4

VC FOR VCE(sat)

VB FOR VBE

Figure 11. Temperature Coefficients

, COLLECTOR CURRENT ( A)

–0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance

VCE = 30 V

TJ = 150

C100

C25

REVERSE FORWARD

IC = ICES

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

≈

ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

200

4.0

0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0

+25

C to +150

–55

C to +25

+25

C to +150

–55

C to +25

+0.7

TJ = 25

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

     

6 Motorola Bipolar Power Transistor Device Data

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