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Dear Customer,
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1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
High-speed switching
General-purpose switching
BAS16 series
High-speed switching diodes
Rev. 6 — 24 September 2014 Product data sheet
Table 1. Product overview
Type number Package Configuration Package
configuration
NXP JEITA JEDEC
BAS16 SOT23 - TO-236AB single small
BAS16H SOD123F - - single s mall and flat lead
BAS16J SOD323F SC-90 - single very small and flat
lead
BAS16L SOD882 - - single leadless ultra
small
BAS16T SOT416 SC-75 - single ultra small
BAS16VV SOT666 - - triple isolated ultra small and flat
lead
BAS16VY SOT363 SC-88 - triple isolated very small
BAS16W SOT323 SC-70 - single very small
BAS316 SOD323 SC-76 - single very small
BAS516 SOD523 SC-79 - single ultra small and flat
lead
High switching speed: trr 4ns Low capacitance
Low leakage current Reverse voltage: VR100 V
Repetitive peak reverse voltage:
VRRM 100 V
Small SMD plastic packages
AEC-Q101 qualified
BAS16_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 24 September 2014 2 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
1.4 Quick reference data
2. Pinning information
[1] The marking bar indicates the cathode.
Table 2. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRreverse voltage - - 100 V
IRreverse current VR=80V - - 0.5 A
trr reverse recovery
time IF=10mA; I
R=10mA;
RL= 100 ; IR(meas) =1 mA --4ns
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAS16; BAS16T; BAS16W
1 anode
2 not connected
3 cathode
BAS16H; BAS16J; BAS316; BAS516
1 cathode [1]
2 anode
BAS16L
1 cathode [1]
2 anode
BAS16VV; BAS16VY
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
006aaa144
12
3
006aaa764
3
12
001aab540
12
006aab040
2
1
21
Transparent
top view
006aab040
2
1
001aab555
6 45
1 32
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Product data sheet Rev. 6 — 24 September 2014 3 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Tabl e 4. Ordering information
Type number Package
Name Description Version
BAS16 TO-236AB plastic surface-mounted package; 3 leads SOT23
BAS16H - plastic surface-mounted package; 2 leads SOD123F
BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F
BAS16L DFN1006-2 leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416
BAS16VV - plastic surface-mounted package; 6 leads SOT666
BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363
BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323
BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 5. Marking codes
Type number Marking code[1]
BAS16 A6*
BAS16H A1
BAS16J AR
BAS16L S2
BAS16T A6
BAS16VV 53
BAS16VY 16*
BAS16W A6*
BAS316 A6
BAS516 6
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -100V
VRreverse voltage - 100 V
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Product data sheet Rev. 6 — 24 September 2014 4 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Single diode loaded.
[4] Soldering point of cathode tab.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[6] Soldering points at pins 4, 5 and 6.
IFforward current
BAS16 [1] -215mA
BAS16H
BAS16L [2] -215mA
BAS16T [1] -155mA
BAS16VV
BAS16VY [1][3] -200mA
BAS16W [1] -175mA
BAS16J
BAS316
BAS516
[1] -250mA
IFRM repetitive peak forward
current tp0.5 ms;
0.25 -500mA
IFSM non-repetitive peak forward
current square wave;
Tj(init) = 25 °C
tp=1s-4A
tp=1ms - 1 A
tp=1s - 0.5 A
Ptot total power dissipation
BAS16 Tamb 25 C[1] -250mW
BAS16H Tamb 25 C[2] -380mW
[5] -830mW
BAS16J Tamb 25 C[5] -550mW
BAS16L Tamb 25 C[2] -250mW
BAS16T Tsp 90 C[1][4] -170mW
BAS16VV Tamb 25 C[1][3] -180mW
BAS16VY Tsp 85 C[1][3][6] -250mW
BAS16W Tamb 25 C[1] -200mW
BAS316 Tsp 90 C[1][4] -400mW
BAS516 Tsp 90 C[1][4] -500mW
Per device
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
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Product data sheet Rev. 6 — 24 September 2014 5 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Single diode loaded.
[5] Soldering point of cathode tab.
[6] Soldering points at pins 4, 5 and 6.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BAS16 [1] - - 500 K/W
BAS16H [2] - - 330 K/W
[3] - - 150 K/W
BAS16J [3] - - 230 K/W
BAS16L [2] - - 500 K/W
BAS16VV [2][4] - - 700 K/W
[3][4] - - 410 K/W
BAS16W [1] - - 625 K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BAS16 - - 330 K/W
BAS16H [5] --70K/W
BAS16J [5] --55K/W
BAS16T - - 350 K/W
BAS16VY [4][6] - - 260 K/W
BAS16W - - 300 K/W
BAS316 [5] - - 150 K/W
BAS516 [5] - - 120 K/W
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Product data sheet Rev. 6 — 24 September 2014 6 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage [1]
IF= 1 mA - - 715 mV
IF= 10 mA - - 855 mV
IF=50mA --1V
IF=150mA --1.25V
IRreverse current VR=25V --30nA
VR=80V --0.5A
VR=25V; T
j=150C --30A
VR=80V; T
j=150C --50A
Cddiode capacitance f = 1 MHz; VR=0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
--1.5pF
BAS516 - - 1 pF
trr reverse recovery time IF=10mA; I
R=10mA;
RL= 100 ;
IR(meas) =1 mA
--4ns
VFR forward recovery voltage IF=10mA; t
r=20ns --1.75V
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Product data sheet Rev. 6 — 24 September 2014 7 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
Based on square wave currents.
Tj(init) =25C
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Non-repetitive peak forward current as a
function of pul se duration; maximum val ues
(1) Tamb = 150 C
(2) Tamb =85C
(3) Tamb =25C
(4) Tamb =40 C
f=1MHz; T
amb =25C
Fig 3. Revers e current as a function of reverse
voltage; typical values Fig 4. Dio de capacitance as a function of reverse
voltage; typical values
006aab132
1
10
102
103
IF
(mA)
101
VF (V)
0 1.41.00.4 0.80.2 1.20.6
(1) (2) (3) (4)
mbg704
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
006aab133
102
IR
(μA)
VR (V)
0 1008040 6020
10
1
101
102
103
104
105
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
VR (V)
Cd
(pF)
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Product data sheet Rev. 6 — 24 September 2014 8 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 10 0 ns; duty cycle =0.05
Oscilloscope: rise time tr=0.35ns
Fig 5. Reverse recovery time test circuit and wav eforms
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp100 ns; duty cycle 0.005
Fig 6. F orward recovery voltage test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
Ω
IF
D.U.T.
Ri = 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
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Product data sheet Rev. 6 — 24 September 2014 9 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
9. Package outline
Fig 7. Package outline BAS16 ( SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)
Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882/DFN1006-2)
Fig 11. Pac kage outline BAS16T (SOT41 6/SC-75) Fig 12. Packag e outline BAS16VV (SOT666)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4 2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3 1.8
1.6
0.40
0.25
1.35
1.15
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45 0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
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Product data sheet Rev. 6 — 24 September 2014 10 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70)
Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523 /SC-79)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
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Product data sheet Rev. 6 — 24 September 2014 11 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
10. Soldering
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BAS16_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 24 September 2014 12 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
1.6
1.6
2.9
4
4.4
1.1 1.22.1
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr
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Product data sheet Rev. 6 — 24 September 2014 13 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2)
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 14 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 15 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 16 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 17 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.4
0.4
(2×)
0.5
(2×)
1.2
solder lands
solder resist
occupied area
solder paste
sod523_fr
Dimensions in mm
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Product data sheet Rev. 6 — 24 September 2014 18 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS16_SER_6 20140924 Product data sheet - BAS16_SER_5
Modifications: Section 1.2 “Features and benefits: updated
Section 4 “Marking: updated
Table 6 “Limiting values: updated
Section 8 “Test in f ormation: updated
Section 12 “Legal information: updated
BAS16_SER_5 20080825 Product data sheet - BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
BAS16_4 20011010 Product specification - BAS16_3
BAS16H_1 20050415 Product data sheet - -
BAS16J_1 20070308 Product data sheet - -
BAS16L_1 20030623 Product specification - -
BAS16T_1 19980120 Product specification - -
BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2
BAS16W_4 19990506 Product specification - BAS16W_3
BAS316_4 20040204 Product specification - BAS316_3
BAS516_1 19980831 Product specification - -
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Product data sheet Rev. 6 — 24 September 2014 19 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information se e the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed be tween
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-crit ical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, deat h or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings onl y and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains dat a from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BAS16_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 24 September 2014 20 of 21
NXP Semiconductors BAS16 series
High-speed switching diodes
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristi cs sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAS16 series
High-speed switching diodes
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 September 2014
Document identifier: BAS16_SER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
13 Contact information. . . . . . . . . . . . . . . . . . . . . 20
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21