HEXFET® Power MOSFET
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
6/5/00
Description
lGeneration 5 Technology
lP-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
VDSS = -20V
RDS(on) = 0.06Ω
IRF7207
Top V iew
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
www.irf.com 1
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -5.4
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V -4.3 A
IDM Pulsed Drain Current -43
PD @TC = 25°C Power Dissipation 2.5
PD @TC = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/ °C
VGS Gate-to-Source Voltage ± 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs -16 V
EAS Single Pulse Avalanche Energy140
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
SO-8
PD - 91879A
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– VV
GS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.06 VGS = -4.5V, ID = -5.4A
––– ––– 0.10 VGS = -2.7V, ID = -2.7A
VGS(th) Gate Threshold Voltage -0.7 ––– ––– VV
DS = VGS, I D = -250µA
gfs Forward Transconductance 8.3 ––– ––– SV
DS = -10V, ID = -5.4A
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = -12V
QgTotal Gate Charge ––– 15 22 ID = -5.4A
Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 5.7 8.6 VGS = -4.5V,
td(on) Turn-On Delay Time ––– 11 ––– VDD = -10V
trRise Time ––– 24 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω
tfFall Time ––– 41 ––– RD = 10Ω,
Ciss Input Capacitance ––– 780 ––– VGS = 0V
Coss Output Capacitance ––– 410 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz,
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.1A, VGS = 0V
trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, I F = -3.1A
Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– -43
-3.1 A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 9.6mH
RG = 25 Ω, IAS = -5.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IRF7207
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
1
10
100
0.1 1 10
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
DS
D
-2.25V
1
10
100
2.0 3.0 4.0 5.0 6.0
V = -10V
20
µ
s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-5.4A
-4.5V
IRF7207
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
400
800
1200
1600
-V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
0 5 10 15 20 25 30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-5.4A
V =-10V
DS
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
100
0.4 0.6 0.7 0.9 1.1 1.2 1.4
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF7207
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-2.4A
-4.3A
-5.4A
IRF7207
6www.irf.com
SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.2 5 (.0 10 ) M A M
A
0.10 (.004)
B 8X
0 .25 ( .0 1 0 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.7 2 (.028 )
8X
1.78 (.0 70)
8 X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM IN CH ES MIL L IMETE RS
MIN MA X MIN MA X
A .0 53 2 .0 68 8 1 .35 1 .7 5
A 1 .0 04 0 .0 09 8 0 .10 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e 1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .8 0 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 . CON TROL L ING DIMEN SION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4 . OUT L INE CONF ORMS TO J EDE C OUT LINE M S- 0 1 2 AA .
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M OL D PROTR USIONS NOT T O EX CEED 0 .2 5 (.00 6).
DIM ENSIONS IS T HE L ENGTH OF L EA D F OR SOL DE RING T O A SU BST RAT E..
5
6
A1
e1
θ
Part Marking
IRF7207
www.irf.com 7
33 0.00
(
12.992
)
MAX.
14.40
(
.56 6
)
12.40
(
.48 8
)
NOTES :
1. CONTRO LLING DIMEN SIO N : M ILLIM ETER.
2. OU TL INE CO NFO R MS T O EIA -481 & EIA -541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3
(
.48 4
)
11.7
(
.46 1
)
8.1
(
.31 8
)
7.9
(
.31 2
)
NOTES:
1. CO NTR OLLING DIM ENSION : M ILLIM ETER.
2. ALL DIM ENSIONS ARE SHOWN IN MILLIM ETERS(INCHES).
3. OU TLIN E C ON FORM S T O EIA-481 & EIA-541.
Tape and Reel
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Data and specifications subject to change without notice. 6/00
