IRF1324S-7PPbF
G D S
Gate Drain Source
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF1324S-7PPbF Tube 50 IRF1324S-7PPbF
Tape and Reel Left 800 IRF1324STRL-7PP
D2Pak 7 Pin
VDSS 24V
RDS(on) typ. 0.8m
max. 1.0m
ID (Silicon Limited) 429A
ID (Package Limited) 240A
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
1 2015-10-15
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 429
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 303
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 240
IDM Pulsed Drain Current 1640
PD @TC = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 1.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.50
°C/W
RJA Junction-to-Ambient ––– 40
D2Pak 7 Pin
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
IAR Avalanche Current See Fig.14,15, 18a, 18b A
EAR Repetitive Avalanche Energy mJ
HEXFET® Power MOSFET