Transistor
Page 1 25/04/08 V1.1
Features:
•Collector-Emitter Sustaining Voltage
VCEC (SUS) = 30V (Minimum)
•Collector-Emitter Saturation Voltage
VCE (sat) = 2.0V (Maximum) at IC= 5.0 A
•Reverse-Base SOA - 300V to 400V at 7A
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 8.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.90
Dimensions : Millimetres
TO-220
NPN
TIP150
7 Ampere
Darington
Power Transistors
300-400 Volts
80 Watts
Transistor
Page 2 25/04/08 V1.1
Maximum Ratings
Characteristic Symbol TIP150 Unit
Collector-Emitter Voltage VCEO
300
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 8.0
Collector Current-Continuous
-Peak
IC
ICM
7.0
10 A
Base Current IB1.5
Total Power Dissipation at TC= 25°C
Derate above 25°C PD80
0.64
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.56 °C/W
Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
Transistor
Page 3 25/04/08 V1.1
Electrical characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - Emitter Breakdown Voltage (1)
(IC= 10mA, lB= 0) TIP150 V(BR) CEO
300
-
V
Collector - Base Breakdown Voltage (1)
(lC = 1.0mA, lB= 0) TIP150 V(BR) CBO -
Collector Cutoff Current
(VCE = 300 V, IB= 0 ) TIP150 ICEO -250 uA
Emitter Cutoff Current
(VEB = 8.0V,lc = 0 ) IEBO -15 mA
ON Characteristics (1)
DC Current Gain
(lc = 2.5A,VCE = 5.0V)
(lc= 5.0A,VCE = 5.0V)
(lc= 7.0A,VCE = 5.0V)
hFE
150
50
15
- -
Collector-Emitter Saturation Voltage
(lc= 1.0A, lB= 10mA)
(lc= 2.0A, IB = 100mA)
(lc= 5.0A, IB= 250mA)
VCE (sat) -
1.5
1.5
2.0
V
Base-Emitter Saturation Voltage
(lc= 2.0A, IB = 100mA)
(lc= 5.0A, IB= 250mA)
VBE (sat) -2.2
2.3
Diode Forward Voltage
(lF = 7.0A) VF-3.5
Dynamic Characteristics
Small-Signal Current Gain
(lc= 0.5 A, VCE = 5.0 V, f = 1.0KHz) hfe 200 - -
Output Capacitance
(VCB = 10 V, IE= 0 , f = 1.0MHz) Cob -150 PF
Switching Characteristics
Delay Time Vcc = 250V, lc= 5.0A td30 (typical) -
ns
Rise Time
IB1 = -IB2 = 250 mA,
tp = 20us,Duty Cycle ≤2.0%
tr180 (typical) -
Storage Time ts3.5 (typical) -
us
Fall Time tf1.6 (typical) -
(1) Pulse Test : Pluse Width =30µs, Duty Cycle ≤2.0%.
Transistor
Page 4 25/04/08 V1.1
DC Current Gain
IC, Collector Current (AMP)
hFE, DC Current Gain
Baes-Emitter Voltage
IC, Collector Current (AMP)
VBE, Base-Emitter Voltage (Volts)
Collector-Emitter Saturation Voltage
IC, Collector Current (AMP)
VCE, collector-Emitter Saturation
Voltage (Volts)
Reverse Biase Safe Operating Area
VCE, Collector Emitter (Volts)
IC, Collector Current (Amp)
Active Region Sage Operating Area
VCE, Collector Emtter Voltage (Volts)
IC, Collector Current (Amp)
There are two limitation on the power handling ability of
a transistoraverage junction temperature and second
breakdown safe operating area curves indicate IC-VCE:
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to
greater dissipation than curves indicate.
The data of FIG-6 curve is base on TJ,PK)=150OC; TC is
variable depending on power level, second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(PK) <150°C,At high case temperatures.thermal limitation
will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
Transistor
Page 5 25/04/08 V1.1
Part Number Table
Description Part Number
Transistor, Darlingtion TO-220 100310
For enquiries from all other markets
Transistor
Page <6> 25/04/08 V1.1
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