VS-10BQ015HM3
www.vishay.com Vishay Semiconductors
Revision: 10-Mar-16 1Document Number: 95722
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High Performance Schottky Rectifier, 1.0 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ015HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
IF(AV) 1.0 A
VR15 V
VF at IF0.21 V
IRM 35 mA at 100 °C
TJ max. 125 °C
Diode variation Single die
EAS 1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 15 V
IFSM tp = 5 μs sine 140 A
VF1.0 Apk, TJ = 125 °C 0.21 V
TJRange -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015HM3 UNITS
Maximum DC reverse voltage VR15 V
Maximum working peak reverse voltage VRWM 25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TL = 134 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A