2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌComplementary to BC807.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Note : hFE Classification 16:100ᴕ250 , 25:160ᴕ400 , 40:250ᴕ630
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ỌA
DC Current Gain (Note)
hFE(1) VCE=1V, IC=100mA 100 - 630
hFE(2) VCE=1V, IC=500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC*350 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
TYPE BC817-16 BC817-25 BC817-40
MARK 6A 6B 6C
* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm.
MARK SPEC
Type Name
Marking
Lot No.