1N4933G – 1N4937G 1 of 4 © 2006 Won-Top Electronics
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1N4933G – 1N4937G
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability
Mechanical Data C
! Case: DO-41, Molded Plastic D
! Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate c urrent by 20%.
Characteristic Symbol 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Vol t age
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 V
Average Rectified Output Current
(Note 1) @T
A = 75°C IO1.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 1.2 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 5.0
100 µA
Reverse Recovery Time (Note 2) trr 200 nS
Typical Junction Capacitance (Note 3) Cj15 pF
Operating Temperature Range Tj-65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Note: 1. Leads maintained at ambi ent temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Dim Min Max
A25.4 —
B4.06 5.21
C0.71 0.864
D2.00 2.72
All Dimensions in mm