GE SOLID STATE Oo1 DE 3675081 0017542 Q i _ 3875081 GE SOLID STATE O1E 17592 6 7- 33-13 ja Pro Eiectron rower Transistors File Number 1216 BUX10A HI gh- Cu rrent, Hi gh- Power TERMINAL DESIGNATIONS : High-Speed Sillcon N-P-N oN Planar Transistor Features: Voeo 125 V @le25A 9208-27816 a Py 150W c (FLANGE) JEDEC TO-204AA The RCA-BUX10A is an epitaxial silicon n-p-n planar transistor having high-voltage and high-current capabilities AND Tg /p LIMITED OF and featuring fast-switching speed at low saturation voltage. 00 NOT DERATE THE SPECIFIED \WaLUE It is especially suitable for control amplifiers and power- switching circuits, such as converters, Invarters, switching regulators, and switching-control amplifiers. The RGCA-BUX10A is supplied in a steel JEDEC TO-204AA hermetic package. OF CURRENT AT SPECIFIED VOLTAGE AT Tg #25C CASE TEMPERATURE (To) = *c a23-25798 Fig. 1Derating curves for Ig/p and dissipation. MAXIMUM RATINGS, Absolute-Maximum Values: BUX10A VeBO seesecens Cae dee enter enctentenees truereureaees Ceneetesnecteecaures teebenesene 170 Vv Veen 160 Vv 125 v 170 v 7. v 25 A 30 A 5 A ToS 28C vesserscnees ene e rere t seen steteceneseniseuseanense pede eeencaveacee 150 Ww Derate linearly 0.86 WIG beeendereservere -65 to +200 C At distances = 1/32 In. (0.8 mm) from seating plane for 10.3 MAX. ..cccesseeesees 235 *c 597G E SOLID STATE Ol DE 3e7sos O017593 2 3875081 GE SOLID STATE k Pro Electron Power Translstors I f BUX10A ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25C Unless Otherwise Specified oie 17593 OT 33713 TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE | CURRENT) BUX10A = lunizs V de Adc Vee | VBE; tc Ip | Min, Typ.|Max. IcCEO 125 0 |] 5 mA V(BR)EBO 0 7{/-| Vv le = 50mA {EBO 5 | 0 |]1 mA VcEo(sus 0.28] 0 |125} | Vv VCER(sus)> Ree = 1002 0.20 160] | 2 10 20 | | 70 hFE 4 20 1o| | VBE(sat) 200] 2 |} [15] 2 V 108 | 1 | j/03/06 VcE(sat) 20 | 2 | /o7/ 15 fr ~| f = 10 MHz 10 2 50 MHz IS!b ~j { = 18, nonrepetitive 25 8 A ton 2012 )]1 115 ts 'By = Bo VCE = 20 | 2 | J06/ 1.2 us te 'By = IBo 30V 20 | 2 | (0.15/02 Reuc } 1.17 | CW 598 Pulsed; pulse duration = 300 ys, duty factor < 2%. b CAUTION; The sustaining voltages Vceo(sus) and VogR(sus) MUST NOT be measured on a curve tracer. O01 COLLECTOR CURRENT {(I)A 10 se Fig. 2Typical dc beta cheracteristics.oe neem SOLID STATE OL DE B3s7so8h cosas y 3875081 GE SOLID STATE O1 17594 0) 7-33-/3 FOR SINGLE NONREPETITIVE PULSE | | (CURVES MUST BE LINEARLY WITH INCREASE IN TEMPERATURE) COLLECTOR CURRENT (I}A Voeo (MAX) = 125 V 1 2 4 6 819 2 4 rro crectron rower Transistors = BUX10A & 899? 1000 COLLECTOR - TO- EMITTER VOLTAGE (Vce)V Fig. 3Maximum safe-operating COLLECTOR-TO-EMITTER VOLTAGE BASE CURRENT [Ig)mA 4 BASE-TO-EMITTER VOLTAGE 92CS-12438A1 Fig, 4Typica! input characteristics, COLLECTOR=TO-EMITTER VOLTAGE E : 92c$-12442h1 Fig. 6Typical transfer characteristics. 92CM-32232 areas (Tq = 25C). CASE TEMP = 5 COLLECTOR CURRENT (Ic)A Eat i ate 54 1 Sol COLLECTOR-TO-EMITTER VOLTAGE (VoelV BUCS -15S652k1 Fig. 5Typical output characteristics. SASE-TO-EMITTER SATURATION VOLTAGE @ 5 1 IS 2 2 30 COLLECTOR CURRENT (T plea 9208-32233 Fig. 7Typical base-to-emitter saturation voltage characteristics. 599G E SOLID STATE OL DE Baers. QOO1?S595 & i ib Pro Electron Power Transistors O1E 17595 D T- S3- IS BUX10A' TEMPERATURE iT. de asec COLLECTOR SUPPLY VOLTAGE (Vec}#30V IssIcsio (Weglsat =v P a 3 3 $ & 3 2 ra a a a E x wv. r 3} e Q 2 o o 3 z 3 S i i 3 S g oo 3 ww COLLECTOR CURRENT (I)eA e2cs-39204 COLLECTOR CURRENT { Ic}eA s2ea-s2235 Fig. 8Typical collector-to-emitter saturation Fig. 9Typieal switching time voltage characteristics. characteristics, 600 ... ---. -.. . -