BF991,215 - NXP - Product.Live

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NXP Semiconductors

BF991

N-channel dual-gate MOS-FET

Rev. 03 — 20 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF991

FEATURES

•Protected against excessive input voltage surges by

integrated back-to-back diodes between gates

and source.

APPLICATIONS

•VHF applications such as:

– VHF television tuners and FM tuners

– Professional communication equipment.

PINNING

PIN SYMBOL DESCRIPTION

1 s, b source

2 d drain

gate 2

gate 1 Fig.1 Simplified outline (SOT143) and symbol.

Marking code: %MA.

handbook, halfpage

s,b

Top view

MAM039

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143

microminiature package with interconnected source

and substrate.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VDS drain-source voltage −20 V

IDdrain current −20 mA

Ptot total power dissipation up to Tamb =60°C−200 mW

Tjjunction temperature −150 °C

transfer admittance f = 1 kHz; ID= 10 mA; VDS =10V; V

G2-S =4V 14 −mS

Cig1-s input capacitance at gate 1 f = 1 MHz; ID= 10 mA; VDS = 10 V; VG2-S = 4 V 2.1 −pF

Crs feedback capacitance f = 1 MHz; ID= 10 mA; VDS = 10 V; VG2-S =4V 20 −fF

F noise ﬁgure f = 200 MHz; GS= 2 mS; BS=B

Sopt;

ID= 10 mA; VDS =10V; V

G2-S =4V 12dB

Rev. 03 - 20 November 2007

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NXP Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF991

LIMITING VALUES

In according with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS drain-source voltage −20 V

IDdrain current (DC) −20 mA

ID(AV) average drain current −20 mA

IG1-S gate 1-source current −±10 mA

IG2-S gate 2-source current −±10 mA

Ptot total power dissipation up to Tamb =60°C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Fig.2 Power derating curve.

handbook, halfpage

0 200

100

200

MGE792

100 Tamb (°C)

Ptot

(mW)

THERMAL CHARACTERISTICS

Note to the Limiting values and the Thermal characteristics

1. Device mounted on a ceramic substrate of 8 ×10 ×0.7 mm.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 460 K/W

Rev. 03 - 20 November 2007

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NXP Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF991

STATIC CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): ID= 10 mA; VDS =10V; V

G2-S =4V; T

amb =25°C.

Note

1. Crystal mounted in a SOT103 package.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IG1-SS gate 1 cut-off current VG1-S =5V; V

G2-S =V

DS =0 −50 nA

IG2-SS gate 2 cut-off current VG2-S =5V; V

G1-S =V

DS =0 −50 nA

IDSS drain current VDS =10V; V

G1-S = 0; VG2-S =4V 4 25 mA

(BR)G1-SS gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S =V

DS =0 6 20 V

(BR)G2-SS gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S =V

DS =0 6 20 V

(P)G1-S gate 1-source cut-off voltage ID=20µA; VDS = 10 V; VG2-S =4V −−2.5 V

V(P)G2-S gate 2-source cut-off voltage ID=20µA; VDS = 10 V; VG1-S =0 −−2.5 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

transfer admittance f = 1 kHz 10 14 −mS

Cig1-s input capacitance at gate 1 f = 1 MHz −2.1 −pF

Cig2-s input capacitance at gate 2 f = 1 MHz −1−pF

Crs feedback capacitance f = 1 MHz −20 −fF

Cos output capacitance f = 1 MHz −1.1 −pF

F noise ﬁgure f = 100 MHz; GS= 1 mS; BS=B

Sopt −0.7 1.7 dB

f = 200 MHz; GS= 2 mS; BS=B

Sopt −12dB

tr transducer gain; note 1 f = 100 MHz; GS= 1 mS; BS=B

Sopt;

GL= 0.5 mS; BL=B

Lopt

−29 −dB

f = 200 MHz; GS= 2 mS; BS=B

Sopt;

GL= 0.5 mS; BL=B

Lopt

−26 −dB

Yfs

Rev. 03 - 20 November 2007

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NXP Semiconductors Product speciﬁcation

N-channel dual-gate MOS-FET BF991

PACKAGE OUTLINE

Fig.3 SOT143.

Dimensions in mm.

See also

Soldering recommendations.

handbook, full pagewidth

MBC845

10

max

10

max

30

max

1.1

max

0.75

0.60

0.150

0.090

0.1

max

M0.1 AB

0

0.1

0.48

TOP VIEW

1.4

1.2 2.5

max

3.0

2.8

0.2 AB

1.9

0

0.1

0.88

1.7

Rev. 03 - 20 November 2007

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NXP Semiconductors BF991

N-channel dual-gate MOS-FET

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 03 - 20 November 2007

6 of 7

NXP Semiconductors BF991

N-channel dual-gate MOS-FET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 November 2007

Document identifier: BF991_N_3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF991_N_3 20071120 Product data sheet - BF991_2

Modiﬁcations: •Fig. 1 on page 2; Figure note changed

BF991_2 19910401 Product speciﬁcation - BF991_SF_1

BF991_SF_1 - - - -