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MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 1
February 2008
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 200 mA
ICP **Collector Current (Pulse) 400 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
B
E
C
Mark: 1J
TO-92
1. Emitter 2. Base 3. Collector
1
MMBT2369 PN2369
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V
V(BR)CES Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 V
ICBO Collector Cutoff Current VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C0.4
30 μA
μA
On Characteristics
hFE DC Current Gain * IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V 40
20 120
VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA 0.25 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.7 0.85 V
Small Signal Characteristics
Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 5.0 pF
hfe Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz 5.0
Switching Characteristics
tsStorage Time IB1 = IB2 = IC = 10mA 13 ns
ton Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns
toff Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA 18 ns
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 3
Package Dimensions
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
Dimensions in Millimeters
MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 4
Package Dimensions (Continued)
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58
+0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
MMBT2369 / PN2369 NPN Switching Tr ansistorMMBT2369 / PN2369
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 5
Rev. I31
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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