COMSET SEMICONDUCTORS 1/2
2N1671 – 2N1671A – 2N1671B
They are designed for medium-power switching, oscillator and pulse timing circuits.
Package outline is similar to TO-5 except
• Highly Stable Negative Resistance and Firing Voltage
• Low Firing Current
• High Pulse Curent Capabilities
• Simplified Circuit Design
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
2N1671
2N1671A
VB1E Base 1 – Emitter Reverse Voltage
2N1671B
30 V
2N1671
2N1671A
VB2E Base 2 – Emitter Reverse Voltage
2N1671B
30 V
2N1671
2N1671A
VB1B2 Interbase Voltage
2N1671B
35 V
2N1671
2N1671A
IFRMS RMS Emitter Current
2N1671B
50 mA
2N1671
2N1671A
IEM Emitter Peak Current
2N1671B
2A
2N1671
2N1671A
PTOT Total Power Dissipation
2N1671B
450 mW
2N1671
2N1671A
TJ Maximum Junction
2N1671B
150
2N1671
2N1671A
TSTG Storage Temperature Range
2N1671B
-55 to +150
°C
This data guaranteed in addition to JEDEC registered data
P
PN
N
B
BA
AR
R-
-T
TY
YP
PE
E
S
SI
IL
LI
IC
CO
ON
N
U
UN
NI
IJ
JU
UN
NC
CT
TI
IO
ON
N
T
TR
RA
AN
NS
SI
IS
ST
TO
OR
RS
S
COMSET SEMICONDUCTORS 2/2
2N1671 – 2N1671A – 2N1671B
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
2N1671 - - -12
2N1671A - - -12
IEB2O Emitter Reverse Current VB2E=30 V, IB1= 0
2N1671B - - -0.2
µA
2N1671 - - 5
2N1671A - - 5
VEB1(sat) Emitter saturation Voltage VB2B1 = 10 V, IE= 50 mA
2N1671B - - 5
V
2N1671 4.7 - 9.1
2N1671A 4.7 - 9.1
RBBO Interbase Resistance VB2B1 = 3 V, , IE= 0
2N1671B 4.7 - 9.1
K
2N1671 0.47 - 0.62
2N1671A 0.47 - 0.62
ηIntrinsic stand-off ratio VB2B1= 10 V
2N1671B 0.47 - 0.62
-
2N1671 - - 8
2N1671A - - 8
IVValley Current VB2B1= 10 V, RB2= 100
2N1671B - - 8
mA
2N1671 - - 25
2N1671A - - 25IPPeak Current VB2B1= 25 V
2N1671B - - 6
µA
MECHANICAL DATA CASE TO-5
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
