2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm * Excellent switching time: ton = 14 ns (typ.) * High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA * Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA * Enhancement-mode * Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS 20 V DC ID 200 Pulse IDP 800 Drain power dissipation (Ta = 25C) PD 200 mW Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain current mA JEDEC JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1988-01 1 2014-03-01 2SK1062 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 100 nA Drain cut-off current IDSS VDS = 60 V, VGS = 0 10 A ID = 1 mA, VGS = 0 60 V Drain-source breakdown voltage V (BR) DSS Vth VDS = 10 V, ID = 1 mA 2 3.5 V Forward transfer admittance Yfs VDS = 10 V, ID = 50 mA 100 mS Drain-source ON resistance RDS (ON) ID = 50 mA, VGS = 10 V 0.6 1.0 Drain-source ON voltage VDS (ON) ID = 50 mA, VGS = 10 V 30 50 mV Gate threshold voltage Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 55 65 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz 13 18 pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 40 50 pF tr 8 ton 14 Rise time Turn-on time ns Switching time Fall time Turn-off Time tf toff VIN: tr, tf < 5 ns D.U 1% (Zout = 50 ) 35 75 Note: This transistor is the electrostatic sensitive device. Please handle with caution. 2 2014-03-01 2SK1062 3 2014-03-01 2SK1062 4 2014-03-01 2SK1062 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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