© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1Publication Order Number:
TIP47/D
TIP47G, TIP48G, TIP50G
High Voltage NPN Silicon
Power Transistors
This series is designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
Features
•Popular TO−220 Plastic Package
•Complementary to the MJE5730 and MJE5731 Series
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol TIP47 TIP48 TIP50 Unit
Collector − Emitter Voltage VCEO 250 300 400 Vdc
Collector − Base Voltage VCB 350 400 500 Vdc
Emitter − Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC1.0 Adc
Collector Current − Peak ICM 2.0 Adc
Base Current IB0.6 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD40
0.32 W
W/_C
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD2.0
0.016 W
W/_C
Unclamped Inducting Load
Energy (See Figure 8)
E 20 mJ
Operating and Storage
Junction Temperature Range
TJ, Tstg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
RqJC 3.125 °C/W
Thermal Resistance,
Junction−to−Ambient
RqJA 62.5 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250−300−400 VOLTS
40 WATTS
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
123
4
TIPxx = Device Code
xx = 47, 48, or 50
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
TIPxxG
AYWW
1
BASE
3
EMITTER
COLLECTOR
2,4
TIP47G, TIP48G, TIP50G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) TIP47
(IC = 30 mAdc, IB = 0) TIP48
TIP50
VCEO(sus) 250
300
400
−
−
−
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) TIP47
(VCE = 200 Vdc, IB = 0) TIP48
(VCE = 300 Vdc, IB = 0) TIP50
ICEO
−
−
−
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0) TIP47
(VCE = 400 Vdc, VBE = 0) TIP48
(VCE = 500 Vdc, VBE = 0) TIP50
ICES
−
−
−
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO −1.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
30
10
150
−
−
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat) −1.0 Vdc
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
VBE(on) −1.5 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT10 −MHz
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 25 − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
TIP47G TO−220
(Pb−Free)
50 Units / Rail
TIP48G TO−220
(Pb−Free)
50 Units / Rail
TIP49G TO−220
(Pb−Free)
50 Units / Rail
TIP50G TO−220
(Pb−Free)
50 Units / Rail
TIP47G, TIP48G, TIP50G
www.onsemi.com
3
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
0 100
0
10
160
20
30
60 80
40 140
40
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1
2
3
4
TA
TA
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
-4.0 V
Figure 2. Switching Time Equivalent Circuit
0.02
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMPS)
0.01
0.1 2.01.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
t, TIME (s)μ
0.5
0.2
0.1
0.05
0.05 0.5
0.02
1.0
tr
0.2
td
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
TIP47G, TIP48G, TIP50G
www.onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 50 500
Figure 5. Active Region Safe Operating Area
0.02
0.05
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
1.0ms
dc
100ms
0.2
0.1
5.0
2.0
IC, COLLECTOR CURRENT (AMPS)
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
100 200
500ms
TC ≤ 25°C
TIP47
TIP48
TIP50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.20.02 0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
5.0
t, TIME (s)μ
2.0
1.0
0.5
0.2
0.1
0.05
1.0 2.0
ts
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tf
IC, COLLECTOR CURRENT (AMPS)
+4.5
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+3.5
+2.5
+1.5
0
-0.5
-1.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/5
qVC FOR VCE(sat)
qVB FOR VBE
Figure 7. Temperature Coefficients
0.02 0.05 0.1 0.2 0.5 1.0 2.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.5
Figure 8. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT 50
MJE171
RBB1 =
150 W100 mH
RBB2 =
100 W
VBB2 =
0
VBB1 = 10 V
VCE MONITOR
TUT
VCC = 20 V
IC MONITOR
RS =
0.1 W
50
0.63 A
0 V
-5 V
tw ≈ 3 ms
(SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
10 V
100 ms
VCE(sat)
TIP47G, TIP48G, TIP50G
www.onsemi.com
5
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
Figure 9. DC Current Gain
100
200
0.04 0.06 0.2 2.00.02
60
40
20
10
6.0
4.0
0.1
Figure 10. “On” Voltages
VCE = 10 V
2.0 0.6 1.00.4
25°C
TJ = 150°C
-55°C
1.4
0.02
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
00.04 0.06 0.1 0.2 0.4 0.6
V, VOLTAGE (VOLTS)
1.0 2.0
VBE(sat) @ IC/IB = 5.0 V
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5.0 V
TIP47G, TIP48G, TIP50G
www.onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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TIP47/D
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